In a micro-device integration process, a donor substrate is provided on which to conduct the initial manufacturing and pixelation steps to define the micro devices, including functional, e.g. light emitting layers, sandwiched between top and bottom conductive layers. The microdevices are then transferred to a system substrate for finalizing and electronic control integration. The transfer may be facilitated by various means, including providing a continuous light emitting functional layer, breakable anchors on the donor substrates, temporary intermediate substrates enabling a thermal transfer technique, or temporary intermediate substrates with a breakable substrate bonding layer.

The present disclosure relates to methods of holding microdevices to the cartridge or donor substrate. Here an anchor layer and a release layer are on the donor substrate and the release layer is removed and a free standing anchor layer holds the microdevice. The present invention further relates to the process of microdevice transfer by reducing a bonding force by reducing the release layer area under the microdevice. Here etching and a blocking structure to control the etching rate may be used.

Some embodiments of the present disclosure discloses a method for transferring electronic devices. The method includes providing an electronic device array structure, a providing carrier, and a plurality of second electronic devices arranged on the providing carrier. Wherein the electronic device array structure includes a carrier and a flawed group arranged on the carrier. The flawed group includes a plurality of first electronic devices and a vacancy. A patterned light is formed to irradiate the providing carrier by using the electronic device array structure.

An embodiment of the present invention provides a transfer film that may be used for both a picking process and a placing process of an element, a transfer method using the transfer film, and an electronic product manufactured using the same. Here, the transfer film according to an embodiment of the present invention includes a base part, an adhesion part, and a first protrusion part. The adhesion part is provided on one surface of the base part, and at least part of the first protrusion part is formed and protruded on one surface of the base part to be accommodated inside the adhesion part, and the thickness increases toward the first direction parallel to the surface of the base part. The first protrusion part is partitioned into a first region including a relatively thick portion of the first protrusion part and a second region including a relatively thin first protrusion part and having weaker adhesive force than the first region, and the element is picked while the first region is lifted first in the picking process, while the element is placed while the second region is lifted first in the placing process.

A chip based on a low-modulus supramolecular coating material includes a chip body and a low-modulus supramolecular coating provided on one side of the chip away from a growth substrate, wherein the chip body is of a cylindrical or columnar structure, the low-modulus supramolecular coating is completely or partially coated on a surface of the chip, and an area of the low-modulus supramolecular coating is less than or equal to an area of the chip body. The transfer substrate includes a substrate and a low-modulus supramolecular coating, wherein the low-modulus supramolecular coating is patterned and modified on a surface of the substrate to form a plurality of transfer sites, and a position and a size of each transfer site correspond to distribution and sizes of the transferred chips. The present application addresses problems such as complicated structures, relatively low transfer efficiency, poor precision and vulnerability of the transferred chips.

A method for manufacturing a semiconductor device includes preparing a temporary fixing structure body in which semiconductor elements each including a first surface on which a connection terminal is formed and a second surface are attached to a temporary fixing material, forming a curable bonding adhesive layer on the second surface of each of the semiconductor elements, attaching a carrier to one surface of the curable bonding adhesive layer opposite to the semiconductor elements, fixing the semiconductor elements to the carrier by curing the curable bonding adhesive layer, and removing the temporary fixing material. The semiconductor elements are attached onto the temporary fixing material such that the first surface of each of the semiconductor elements is directed toward the temporary fixing material, and are encapsulated with an encapsulant material such that the second surface of each of the semiconductor elements is exposed from an encapsulant material layer.

Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 2633 mm, using pick-and-place assembly.

A photosensitive transfer material including a temporary support and a transfer layer including a photosensitive layer, in which a transmittance of the photosensitive layer to light having a wavelength of 365 nm is 0.1% to 30% or a transmittance of the photosensitive layer to light having a wavelength of 405 nm is 0.05% to 30%.

A method and a device for the separation of structures from a substrate. Furthermore, the invention relates to a method and a device for transferring structures from a first substrate to a second substrate.

A mass transfer method includes providing at least one transfer cavity including a bottom plate with through holes and a cavity wall connecting the bottom plate; providing an array substrate with capture holes; placing micro light emitting diodes into each transfer cavity; attaching the array substrate to the bottom plate; aligning each through hole with a corresponding capture hole by moving the array substrate; causing the micro light emitting diodes to fall into a corresponding capture hole through the corresponding one through hole; and continuously moving the array substrate such that each capture hole in the array substrate is filled with one micro light emitting diode.