A light emitting display apparatus includes a first substrate including pixels and signal lines arranged in a first direction and a second substrate disposed on a rear surface of the first substrate, wherein a routing portion including routing lines is provided in a first lateral surface of the first substrate and a second lateral surface of the second substrate. In the first substrate, a first pad portion adjacent to the first lateral surface includes first pads connected to the signal lines and the routing lines, a first secondary pad provided between the first pads, and a first connection line provided to overlap the first pads and the first secondary pad. In the second substrate, a second pad portion adjacent to the second lateral surface includes second pads connected to the routing lines, a second secondary pad provided between the second pads, and a second connection line provided to overlap the second pads and the second secondary pad. The routing portion includes a secondary routing line connecting the first secondary pad to the second secondary pad.

A semiconductor device includes semiconductor elements. Each semiconductor element, including first, second and third electrodes, is controlled to turn on and off current flow between the first electrode and the second electrode by drive signals inputted to the third electrode. The first electrodes of the semiconductor elements are electrically connected mutually, and the second electrodes of the semiconductor elements are electrically connected mutually. The semiconductor device further includes a control terminal receiving the drive signals, a first wiring section connected to the control terminal, a second wiring section, and third wiring sections, and further a first connecting member electrically connecting the first and the second wiring sections, a second connecting member electrically connecting the second wiring section and each third wiring section, and third connecting members connecting the third wiring sections and the third electrodes of the semiconductor elements.

A storage device includes a substrate of a memory package and a first memory die. The substrate includes a controller and a first pin pad, the first pin pad being electrically connected to the controller and defining a data channel for data communications. The first memory die includes a front pin pad electrically connected to the first pin pad of the substrate by way of a first bond wire, a rear pin pad, a redistribution layer electrically connecting the front pin pad and the rear pin pad of the first memory die, and a plurality of memory cells configured to provide non-volatile storage accessible by way of the data channel.

Examples of low capacitance bidirectional and unidirectional electrostatic discharge (ESD) protection devices for high voltage (e.g., 15 kV, 30 kV) applications are provided. Such devices include a circuit of a diode and a Zener diode coupled via their anodes to form an NPN structure and another, low capacitance diode coupled in series with the NPN structure. Such circuit may be configured on each of two dies, and the circuits coupled via wire bonds. Additional wire bonds may be used to respectively couple two pins of the device to the two circuits, or the pins may be coupled to the circuits via respective conductive die attaches. In a multichip module (MCM) topology, the NPN diode structure may be coupled to two low capacitance diodes on one die, and that circuit may be coupled to a third low capacitance diode disposed on another die. Some arrangements employ an insulator in conjunction with a single die. Some arrangements enable FlipChip fabrication technology.

A power semiconductor device includes a substrate including SiC of a first conductivity type and including a first region and a second region, a drift layer of the first conductivity type on the substrate and in the first and second regions, a well region of a second conductivity type on the drift layer and in in the first region, a source region of the first conductivity type within the well region, a gate electrode on and extending along an upper surface of the well region, a source electrode connected to the source region in the first region, a metal layer connected to the drift layer in the second region, and a passivation layer covering the source electrode and the metal layer. The passivation layer defines a recessed portion between the first region and the second region.

A semiconductor package includes a leadframe having a die pad and a plurality of pins disposed around the die pad, a metal interposer attached to a top surface of the die pad, and a semiconductor die attached to a top surface of the metal interposer. A plurality of bond wires with same function is bonded to the metal interposer. The die pad, the metal interposer and the semiconductor die are stacked in layers so as to form a pyramidal stack structure.

A described example includes: a semiconductor die having a device side surface and an opposing backside surface, the backside surface mounted to a die pad of a lead frame, the lead frame comprising conductive leads spaced from the die pad; a conductor layer overlying the device side surface; bond pads including bond pad conductors formed in the conductor layer, a nickel layer over the bond pad conductors, and a palladium or gold layer over the nickel layer; conductor traces formed in the conductor layer, the conductor traces free from the nickel layer and the palladium or gold layer; bond wires bonded to the bond pads electrically coupling the bond pads to conductive leads; and mold compound covering the semiconductor die, the bond pads, the bond wires, and portions of the lead frame, wherein portions of the conductive leads are exposed from the mold compound to form terminals.

A coating process of a coating liquid using a nozzle is performed on a coating target structure including a semiconductor element and a wire bonded to the semiconductor element by a wire bonding process. The nozzle has a transport wind generating function of generating a liquid transport wind in a spiral manner. Thus, the coating liquid discharged from the coating liquid supply port of the nozzle is supplied to the coating target structure along the directivity of the liquid transport wind. Then, a drying process is performed on the coating target structure to form a primary layer containing a silane coupling agent as a constituent material on an outer periphery of the wire.

Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a base layer, a dielectric interposer coupled to the base layer and including a first outer surface facing the base layer and an opposing second outer surface facing away from the base layer and spaced apart from the first outer surface in a direction, a first electrical-connection cut-in in the second outer surface that extends, in the direction, toward the first outer surface, and one or more first electrical connections disposed within the first electrical-connection cut-in such that at least a portion of the one or more first electrical connections does not extend, in the direction, beyond the second outer surface.

According to one embodiment, a semiconductor device includes first and second frames, a first semiconductor chip, a wire, and a resin. The second frame is arranged so as to face the first frame in a first direction, and has a stepped portion on an end portion of an upper surface. The first semiconductor chip is arranged on a bottom surface of the stepped portion. The wire electrically couples the first semiconductor chip and the first frame. The resin covers part of each of the first and second frames and seals the first semiconductor chip and the wire. A lower surface of the first frame and a side surface of the first frame in the first direction are exposed from the resin. A lower surface of the second frame and a side surface of the second frame in the first direction are exposed from the resin.