A semiconductor assembly, a packaging structure, and associated method for corner stress reduction in semiconductor devices. The assembly includes a plurality of semiconductor dies and a plurality of spacers. Each spacer in the plurality of spacers is disposed between and configured to separate two semiconductor dies in the plurality of semiconductor dies. At least one spacer in the plurality of spacers has at least one extended spacer corner feature configured to extend toward at least one corner of at least one semiconductor die in the plurality of semiconductor dies disposed adjacent to the at least one spacer. At least one extended spacer corner feature is configured to reduce stress on at least one semiconductor die.

A packaging structure includes heat dissipation substrate, a lead frame, multiple half-bridge modules, and a package body. The heat dissipation substrate has a metal routing. The lead frame is coupled to the heat dissipation substrate and includes a power pin and a ground pin. Half-bridge modules connect in parallel between the power pin and the ground pin. Each half-bridge module includes a high-side SiC transistor, a low-side SiC transistor and a first clip. The high-side SiC transistor and the low-side and the SiC transistor are flip-chip mounted on the corresponding position of the metal routing of the heat dissipation substrate. The source electrode of the high-side SiC transistor is coupled to the drain electrode of the low-side SiC transistor through the first connecting piece and the metal routing. The package covers the heat dissipation substrate, multiple sets of half-bridge modules and part of the lead frame.

A copper paste for joining contains metal particles and a dispersion medium, in which the copper paste for joining contains copper particles as the metal particles, and the copper paste for joining contains dihydroterpineol as the dispersion medium. A method for manufacturing a joined body is a method for manufacturing a joined body which includes a first member, a second member, and a joining portion that joins the first member and the second member, the method including: a first step of printing the above-described copper paste for joining to at least one joining surface of the first member and the second member to prepare a laminate having a laminate structure in which the first member, the copper paste for joining, and the second member are laminated in this order; and a second step of sintering the copper paste for joining of the laminate.

A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

A device includes a first conductive-member which connects to a first electrode on a first face of a chip. A second conductive-member is spaced from the chip and the first conductive-member. A third conductive-member is spaced from the first and second conductive-members. A first connector connects between the second electrode and the second conductive-member. A second connector is opposed to a third electrode on the second face and connects the third electrode and the third conductive-member. A first connecting-member connects the first connector and the second face. A second connecting-member connects the first connector and the second conductive-member. The first connector includes first protruded portions protruded in a first direction from the first conductive-member to the second conductive-member. The second connecting-member is provided to correspond to each of places between the first protruded portions and the second conductive-member.

A transistor device includes: a plurality of transistor cells in a semiconductor substrate; and a source pad above the semiconductor substrate and electrically connected to a source region and a body region of the transistor cells. A first group of the transistor cells has a first body region average doping concentration. A second group of the transistor cells has a second body region average doping concentration higher than the first body region average doping concentration. The transistor cells of the first and second groups are interleaved. The transistor cells have a first source region density in a first area of the semiconductor substrate underneath a region of the source pad designated for clip contacting, and a second source region density lower than the first source region density in a second area of the semiconductor substrate outside the first area.

A package and method is disclosed. In one example, the package comprises a component assembly section, at least one electronic component being assembled with the component assembly section, at least one lead section being electrically coupled with the at least one electronic component and/or with the component assembly section, an encapsulant at least partially encapsulating the at least one electronic component and partially encapsulating the component assembly section and the at least one lead section so that part of the component assembly section and part of the at least one lead section are exposed beyond the encapsulant. A thermoplastic structure covers an exposed area of the component assembly section without covering an exposed area of the at least one lead section.

A semiconductor die and an electrically conductive ribbon are arranged on a substrate. The electrically conductive ribbon includes a roughened surface. An insulating encapsulation is molded onto the semiconductor die and the electrically conductive ribbon. The roughened surface of the electrically conductive ribbon provides a roughened coupling interface to the insulating encapsulation.

A variety of footed and leadless semiconductor packages, with either exposed or isolated die pads, are described. Some of the packages have leads with highly coplanar feet that protrude from a plastic body, facilitating mounting the packages on printed circuit boards using wave-soldering techniques.

Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.