A method includes providing initial process conditions to a model associated with a process chamber. The method further includes providing an indication of one or more adjustments to the process chamber resulting in final process conditions to the model. The method further includes obtaining an indication of first gas backflow to a substrate support of the process chamber from the model. The method further includes generating updated one or more adjustments to the process chamber. The method further includes providing an indication of the updated one or more adjustments to the model. The method further includes obtaining from the model an indication of second gas backflow to the substrate support. The method further includes performing a corrective action based on the updated one or more adjustments.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

A method and device for producing contact metallizations on terminal faces of wafers by a manipulator unit for handling the wafers and a plurality of work stations each having a processing space for receiving the wafers, the plurality of work stations including a depositing station, which has a processing space for receiving a solution of contact metal dissolved in a carrier liquid for deposition on the terminal faces of the wafers, detecting a measured value of an object property of a wafer or of a work station by a sensor, and determining a prioritization of equipping the processing spaces or a dwell time of the wafers in a processing space by querying the measured value in a databank or by means of inference using a statistic model while entering the measured value, generating a control dataset for the manipulator unit; and handling the wafers according to the control dataset.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.

Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.

The present invention relates to a tape sticking system for sticking a protective tape for protecting a peripheral portion of a substrate, such as a wafer. The tape sticking apparatus (10) includes a substrate holder (21) for sticking, a side roller (43), a first roller (46), a second roller (47), a roller-driving motor (49) coupled to the second roller (47), and a nipping mechanism (60) for nipping the peripheral portion of the substrate (W) with the first roller (46) and the second roller (47). The tape sticking apparatus (10) is configured to cause the second roller (47) to be rotated by use of the roller-driving motor (49) while nipping the peripheral portion of the substrate, held to the substrate holder (21) for sticking, with the first roller (46) and the second roller (47), to thereby rotate the substrate.

An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

A method of processing a metal layer for a semiconductor structure includes performing a metal surface recovery process to remove an oxidized or nitridized layer from a surface of the metal layer and recover a metal surface of the metal layer, performing a metal passivation process to passivate the metal surface of the metal layer and form a passivation layer, and performing an encapsulation layer deposition process to deposit an encapsulation layer on the passivation layer.

A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.

Embodiments of the present disclosure generally relate to mass arrangements for lift frames, and related substrate processing chambers, chamber kits, and methods. In one or more embodiments, a processing chamber includes a chamber body including a plurality of gas inject passages formed in the chamber body. The chamber body at least partially defines an internal volume. The processing chamber includes a substrate support assembly positioned in the internal volume. The substrate support assembly includes a lift frame. The lift frame includes a plurality of arms and a ring supported by the plurality of arms. The lift frame includes a plurality of sections azimuthally spaced from each other. The plurality of sections have a different transmissivity than the ring.