A semiconductor package includes: a lower redistribution wiring layer having: a first chip mounting region; a peripheral region, and lower redistribution wirings; a logic semiconductor chip mounted in the first chip mounting region, the logic semiconductor chip having a plurality of first through electrodes that are electrically connected to at least some of the lower redistribution wirings; a first sealing member covering the logic semiconductor chip, a plurality of conductive connectors penetrating the first sealing member in the peripheral region; an upper redistribution wiring layer provided on the first seal and having upper redistribution wirings that are electrically connected to the plurality of conductive connectors, the upper redistribution wiring layer having at least one second chip mounting region that overlaps at least a portion of the first chip mounting region; and at least one memory semiconductor chip mounted in the second chip mounting region using first and second conductive bumps.

Provided is a semiconductor package including an interposer, a first semiconductor chip stack arranged on the interposer and including a plurality of first semiconductor chips, a second semiconductor chip stack arranged on the interposer and including a plurality of second semiconductor chips, and spaced apart from the first semiconductor chip stack in a lateral direction, and a first bridge chip arranged on the interposer, wherein the interposer includes a second wiring structure, a first wiring structure spaced apart from the second wiring structure upwardly, a first embedded semiconductor chip and a second embedded semiconductor chip arranged between the first wiring structure and the second wiring structure, and a plurality of first conductive posts arranged between the first embedded semiconductor chip and the second embedded semiconductor chip.

Provided is a semiconductor package, including a first chip, a second chip disposed on the first chip along a first direction, a first spacer film disposed below the second chip and covering at least a portion of a side surface of the first chip, and a first molding film disposed below the second chip and disposed to cover a side surface of the first spacer film, wherein the first spacer film and the first molding film include materials different from each other, and the side surface of the first spacer film is curved to be convex.

A method for fabricating semiconductor device includes the steps of first providing a first substrate having a high-voltage (HV) region and a medium voltage (MV) region and a second substrate having a low-voltage (LV) region and a static random access memory (SRAM) region, in which the HV region includes a HV device, the MV region includes a MV device, the LV region includes a fin field-effect transistor (FinFET), and the SRAM region includes a SRAM device. Next, a bonding process is conducted by using hybrid bonding, through-silicon interposer (TSI) or redistribution layer (RDL) for bonding the first substrate and the second substrate.

A semiconductor package may include a buffer die, memory die stack units, each of which may include memory dies stacked in a vertical direction, stacked in the vertical direction on the buffer die, and a molding member on the buffer die and covering sidewalls of the memory die stack units. A gap may be between a first memory die and a second memory die over the first memory die among the memory dies of each of the memory die stack units. The molding member may fill the gap.

Provided is a semiconductor package including: a substrate; a first semiconductor chip on the substrate; a first dielectric layer on the substrate and at least partially surrounding the first semiconductor chip; a first passivation layer on a top surface of the first semiconductor chip and a top surface of the first dielectric layer; a second semiconductor chip on the first passivation layer; a first etch-stop layer on a top surface of the first passivation layer and on a top surface and a lateral surface of the second semiconductor chip; and a second dielectric layer on the first etch-stop layer and at least partially surrounding the second semiconductor chip, wherein a thermal expansion coefficient of the first dielectric layer is less than a thermal expansion coefficient of the substrate, and wherein a thermal expansion coefficient of the second dielectric layer is greater than the thermal expansion coefficient of the substrate.

A semiconductor processing apparatus includes a supporting platform configured to support a wafer stack structure comprising a first wafer bonded over a second wafer, and an injection device movably disposed above the supporting platform. The injection device includes an edge detector configured to locate a beveled edge between the first wafer and the second wafer, and a plasma injector coupled to the edge detector and configured to perform a plasma treatment over the beveled edge between the first wafer and the second wafer.

Embodiments of the present disclosure provide a semiconductor structure including Through Silicon Vias (TSVs) for delivering power from a backside power rail to a front side device layer and Feed Through Vias (FTVs) for delivering signals between a backside interconnect structures and a front side interconnect structure. The TSV provides reduces RC delays in the semiconductor structure.

Provided is a semiconductor device including a buffer die configured to communicate with an external device, a memory die stack including a plurality of memory dies stacked on the buffer die and connected to the buffer die through a plurality of through silicon vias, and a capacitor arranged on an upper portion of an uppermost memory die among the plurality of memory dies, wherein the capacitor surrounds at least some surfaces of the plurality of memory dies, when viewed in a top down view.

A device may include a plurality of chiplets stacked on top of each other. Each chiplet includes a central region and an edge region outside the central region; one or more electronic components disposed within the central region; and a plurality of through-chiplet vias extending through the chiplet. The plurality of through-chiplet vias are disposed in the edge region. The device may further include a coil including a plurality of turns formed in at least two chiplets of the plurality of chiplets. Each turn includes at least two through-chiplet vias of at least one chiplet of the plurality of chiplets. The through-chiplet vias of the plurality of through-chiplet vias of the at least two turns of the plurality of turns of the coil are formed in a common plane perpendicular to main surfaces of the plurality of chiplets.