A heat-transfer component defines a thermal-interface surface and has a composite thermal-interface material bonded to the thermal-interface surface. The composite thermal-interface material comprises a particulate filler material dispersed within a metallic carrier material. With a thermal-interface material bonded to the thermal-interface surface, the thermal-contact resistance between the thermal-interface material and the heat-transfer component can be reduced compared to conventional thermal-interface materials, including conventional metallic thermal-interface materials. The particulate filler material can have a higher bulk thermal conductivity than the metallic carrier material and can be wetted by the metallic carrier material, providing a bulk thermal conductivity of the composite thermal-interface material that is higher than that of the carrier material without the particulate filler material. Such materials can relieve thermally induced mechanical stresses across an interface between materials having different coefficients of thermal expansion. Some electrical devices include a heat generating component cooled by such a heat-transfer component.

An apparatus including a stack of a plurality of substrates, wherein the stack includes a plurality of channels extending therethrough. The plurality of channels are configured to allow air to flow therethrough; a plurality of dynamic random-access memory (DRAM) chips. Respective ones of the plurality of DRAM chips are attached to one of the plurality of substrates and located within one of the plurality of channels. The apparatus also includes a plurality of processor chips located on an outer surface of the stack, and a plurality of wires electrically connecting the plurality of DRAM chips to the plurality of processor chips.

This disclosure provides a heat dissipation assembly and an electronic device. The heat dissipation assembly includes a first fan, a first fin assembly, a second fan, a second fin assembly, a vapor chamber and a heat dissipation sheet. The second fan has a second inlet, at least one second outlet and a side outlet. The at least one second outlet and the side outlet are in fluid communication with the second inlet. A direction of the side outlet directs toward the first fan. The vapor chamber is thermally coupled to the first fin assembly and the second fin assembly. The heat dissipation sheet is in thermal contact with a side of the vapor chamber, and located between the first fan and the second fan.

A cooling package for an integrated circuit, including: package substrate of the integrated circuit having a first package surface, an enclosure and a thermal conductive material filling a gap between the substrate and a circuit die locatable therein and filling a gap between interior sidewalls of the enclosure and sidewall surfaces of the circuit die couplable to the first package surface. A method including: mounting an enclosure to the first package surface, the enclosure surrounding a location on the first package surface the circuit die is couplable thereto and the circuit die is locatable therein, and, filling the enclosure with the thermal conductive material such that the gaps are filled with the thermal conductive material. An integrated circuit cooling package including the substrate, first and second enclosures and first and second thermal conductive materials is also disclosed.

A vertical line card (VLC) system is disclosed. In one aspect, a VLC system includes a vertically-oriented printed circuit board (PCB), a vertically-oriented integrated circuit (IC) mounted to the PCB, and a cage assembly having cages arranged in a splayed layout so that the cages angularly fan out with respect to the IC.

A low thermal resistance device package and heatsink assembly may include a device package containing one or more logic elements with the logic elements thermally connected to one or more diamond dies in a manner that provides a thermally conductive connection between the logic elements through the one or more diamond dies and one or more heatsinks. Each heatsink contains one or more chambers configured for a fluid heat transfer medium. A reconstituted wafer product may include a plurality of diamond dies attached to at least a first wafer in a manner that provides a thermally conductive connection between the first wafer and the dies containing diamond. The first wafer may be a 300 millimeters sized wafer and the diamond dies may include four sector dies arranged in four sectors of the 300 millimeters sized wafer.

A method for mounting a fin system in a power module includes: sintering a fin system to a first base substrate, the fin system comprising a plurality of fins attached to and extending away from a base plate; sintering a first power switch component to the first base substrate; sintering a second power switch component to a second base substrate; and soldering a heat dissipation element to the second base substrate.

Examples herein describe integrated circuit (IC) devices with cooling plates. An IC device includes a circuit board and an IC die mounted on a first side of the circuit board. A thermally conductive plate is disposed over the first side of the circuit board. Thermal interface material is disposed between the IC die and the thermally conductive plate. The IC device includes fins having a first end in contact with a side of the thermally conductive plate that contacts the thermal interface material and a second end that extends beyond a second side of the circuit board.

This application is directed to cooling a semiconductor system. The semiconductor system includes a device substrate having a first surface and a second surface, an electronic component thermally coupled to the device substrate, and a cooling substrate coupled to the device substrate. The cooling substrate includes a third surface facing the second surface of the device substrate, a fourth surface opposite the third surface, and a plurality of vias between the third and fourth surfaces. The second surface and the third surface define a cavity therebetween, such that in use coolant flows from the fourth surface through the plurality of vias to exit at the third surface, enters the cavity between the second and third surfaces, and impinges on the second surface. At least a portion of one or more of the device substrate and the cooling substrate have similar coefficients of thermal expansion.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a second die and a third die, the second and third dies having a first surface and an opposing second surface, wherein the first surfaces of the second and third dies are electrically coupled to the surface of the first die; a first material on the surface of the first die and around and between the second and third dies, the first material having a non-planar surface; a layer on the non-planar surface of the first material and the second surfaces of the second and third dies, the layer including a second material having a thermal conductivity equal to or greater than 10 watt per meter-kelvin (W/m-K) and a thickness between 1 micron and 2 microns; and a substrate, on the layer, including a microchannel.