Provided is a thermosetting resin composition containing: (A) silver particles including secondary particles having an average particle size from 0.5 to 5.0 m, the secondary particles being formed by aggregation of primary particles having an average particle size from 10 to 100 nm; and (B) a thermosetting resin.

A chip package structure is provided. The chip package structure includes a first redistribution structure having a first surface and a second surface. The first redistribution structure includes a first pad and a second pad, the first pad is adjacent to the first surface, and the second pad is adjacent to and exposed from the second surface. The chip package structure includes a chip package bonded to the first pad through a first bump, wherein a first width of the first pad decreases in a first direction away from the chip package, and a second width of the second pad decreases in the first direction. The chip package structure includes a second bump over the second pad.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a template structure having a first surface and an opposing second surface, wherein the first surface of the template structure is coupled to the surface of the first die, and wherein the template structure includes a cavity at the first surface and a through-template opening extending from a top surface of the cavity to the second surface of the template structure; and a second die within the cavity of the template structure and electrically coupled to the surface of the first die by interconnects having a pitch of less than 10 microns between adjacent interconnects.

A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microclectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

A method for bonding semiconductor dies, resulting semiconductor devices, and associated systems and methods are disclosed. In some embodiments, the method includes depositing a first material on the first semiconductor die. The first material has a first outer surface and a first chemical composition at the first outer surface. The method also includes depositing a second material on the second semiconductor die. The second material has a second outer surface and a second chemical composition at the second outer surface that is different from the first chemical composition. The method also includes stacking the dies. The second outer surface of the second semiconductor die is in contact with the first outer surface of the first semiconductor die in the stack. The method also includes reacting the first outer surface with the second outer surface. The reaction causes the first outer surface to bond to the second outer surface.

An electronic device includes a conductive lead, a semiconductor die, a package structure enclosing the semiconductor die and a portion of the conductive lead, and a non-conductive die attach film extending between the conductive lead and the semiconductor die and having a thickness less than 50 m. A method of fabricating an electronic device includes singulating portions of a non-conductive die attach film on a carrier, partially singulating prospective die areas from a front side of a wafer, removing wafer material from a back side of the wafer to separate a semiconductor die from the wafer, and attaching a backside the semiconductor die to a singulated portion of the non-conductive die attach film on the carrier.

The present disclosure describes a bonded semiconductor structure and a method of forming the bonded semiconductor structure. The bonded semiconductor structure includes first and second substrates bonded with a bonding structure. The bonding structure provides high thermal conductivity and high bonding strength between the first and second substrates. The bonding structure includes bonding layers and adhesion layers, with the bonding layers including titanium oxide and the adhesion layers including titanium nitride. The method includes forming a first adhesion layer on the first substrate and a second adhesion layer on the second substrate. The method also includes forming a first bonding layer on the first adhesion layer and a second bonding layer on the second adhesion layer. The method further includes bonding the first and second substrates by bonding the first and second bonding layers together.

The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200 C. and in some embodiments at about 150 C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

The invention relates to a sintering paste consisting of: (A) 30 to 40 wt. % of silver flakes with an average particle size ranging from 1 to 20 m, (B) 8 to 20 wt. % of silver particles with an average particle size ranging from 20 to 100 nm, (C) 30 to 45 wt. % of silver(I) oxide particles, (D) 12 to 20 wt. % of at least one organic solvent, (E) 0 to 1 wt. % of at least one polymer binder, and (F) 0 to 0.5 wt. % of at least one additive differing from constituents (A) to (E).