The invention provides a semiconductor structure, which comprises a chip comprising a substrate, wherein the substrate has a front surface and a back surface, and the front surface of the substrate comprises a circuit layer, the back surface of the substrate comprises a plurality of microstructures, and a thermal interface material located on the back surface of the substrate, and the thermal interface material contacts the microstructures directly.

A semiconductor package structure includes a first package component, a second package component disposed over the first package component, a plurality of connectors between the first package component and the second package component, an underfill between the first package component and the second package component and surrounding the plurality of connectors, and a plurality of heat sink fibers in the underfill. A thermal conductivity of the plurality of heat sink fibers is greater than a thermal conductivity of the underfill.

A thermal interface layer includes pluralities of first and second particles dispersed in a polymeric binder at a total loading V in a range of about 40 volume percent to about 70 volume percent. The first and second particles have different compositions. The first particles include one or more of iron or nickel. The second particles include one or more of aluminum, magnesium, silicon, copper, or zinc. The thermal interface layer has a thermal conductivity in a thickness direction of the thermal interface layer in units of W/mK of at least K=5.10.17 V+0.002 V.sup.2.

A direct cooling type power module comprising, an enclosure filled with an insulating fluid, a power semiconductor device disposed inside the enclosure and a bonding unit comprising a porous layer, and a thermally conductive layer to which the power semiconductor device is bonded, and allowing the power semiconductor device to exchange heat with the insulating fluid by the porous layer and the thermally conductive layer.

A method for manufacturing a semiconductor structure includes: forming a device portion and a front interconnect portion on a base substrate; forming a first bonding part on the front interconnect portion opposite to the device portion, the first bonding part including a first bonding layer and heat-dissipating elements formed in the first bonding layer, a thermal resistance of the heat-dissipating elements being smaller than a thermal resistance of the first bonding layer; forming a second bonding part on a carrier substrate; and performing a bonding process to bond the second bonding part to the first bonding part.

A semiconductor package includes: a package substrate; a semiconductor chip on the package substrate; a molding layer on the semiconductor chip on the package substrate; a protective layer on a first surface of the molding layer; and one or more connection terminals on a surface of the package substrate, in which an elastic modulus of the protective layer is larger than an elastic modulus of the molding layer.

An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a metal matrix composite layer on the backside surface, wherein the metal matrix composite layer has a filler material disposed therein to reduce the coefficient of thermal expansion thereof. The filler material may be a plurality of graphitic carbon filler particles, wherein the plurality of graphitic carbon filler particles has an average aspect ratio of greater than about 10, or the filler material may be a plurality of diamond particles, wherein the filler material is clad with a metal material.

A spherical alumina powder, wherein D50 is 0.1 to 40 m; a circularity is 0.90 or more and 1.00 or less; an -phase percentage is 60% or more and 100% or less; and a particle surface roughness represented by Equation (1) below is 1.14 or more and 1.35 or less:

[00001]$\begin{array}{cc}\mathrm{Particle}\mathrm{surface}\mathrm{roughness}=\mathrm{BET}\mathrm{specific}\mathrm{surface}\mathrm{area}A/\mathrm{sphere}-\mathrm{equivalent}\mathrm{specific}\mathrm{surface}\mathrm{area}\mathrm{Sa}\mathrm{calculated}\mathrm{from}\mathrm{particle}\mathrm{size}\mathrm{distribution}.& \mathrm{Equation}\left(1\right)\end{array}$

Provided are an electronic package and an electronic structure. The electronic package includes a carrier, an electronic component disposed on the carrier, a heat dissipation member connected to the electronic component through a thermal interface material, a backside metal layer disposed on the electronic component and connected to the thermal interface material, and a nanowire array metal layer disposed between the thermal interface material and the backside metal layer. Therefore, a displacement of the thermal interface material relative to the backside metal layer is limited by a rough surface of the nanowire array metal layer. As such, a migration of the thermal interface material and a resulting poor bonding between the heat dissipation member and the electronic component, which affect a heat dissipation efficiency of the electronic package, can be prevented.

Systems and methods for cooling an Integrated Circuit (IC) are provided. In one embodiment, the system includes a vessel for holding a coolant in a liquid phase, where the IC is at least in part thermally coupled to the coolant via a heat transfer surface to transfer heat generated by the IC to the coolant. The heat transfer surface has a porous surface exhibiting a gradient of porosity and/or particle size along at least one direction of the heat transfer surface.