A system is provided. The system includes a semiconductor fabrication station and a rescue system. The semiconductor fabrication station includes a tank to hold a liquid. The semiconductor fabrication station is configured to perform a semiconductor fabrication process on a semiconductor wafer disposed in the tank. The rescue system is configured to monitor a signal line indicative of a state of the semiconductor fabrication station. The rescue system is configured to open a drain valve of the tank to drain the liquid from the tank in response to the signal line indicating a potential fabrication station error.

A method of forming a semiconductor device includes forming a transistor comprising a gate stack on a semiconductor substrate by, at least, forming a first dielectric layer on the semiconductor substrate, forming a dipole layer on the dielectric layer; forming a second dielectric layer on the dipole layer, forming a conductive work function layer on the second dielectric layer, forming a gate electrode layer on the conductive work function layer. The method also includes varying a distance between dipole inducing elements in the dipole layer and a surface of the semiconductor substrate by tuning a thickness of the first dielectric layer to adjust a threshold voltage of the transistor.

According to the present invention, a substrate W is provided with a recess 95. The width of the recess 95 is smaller than the depth of the recess 95. An etching target which is at least one of a single crystal of silicon, a polysilicon and an amorphous silicon is exposed in at least a part of the upper part of a lateral surface 95s and in at least a part of the lower part of the lateral surface 95s. The etching target is etched by supplying an alkaline first etching liquid, in which an inert gas is dissolved, to the substrate W. The etching target is etched by supplying an alkaline second etching liquid, in which a dissolution gas is dissolved, and which has a dissolved oxygen concentration higher than that of the first etching liquid, to the substrate W before or after the first etching liquid is supplied to the substrate W.

A method of forming a semiconductor device includes forming a fin over a substrate, the fin comprising alternately stacking first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form spaces each between the second semiconductor layers, forming a gate dielectric layer wrapping around each of the second semiconductor layers, forming a fluorine-containing layer on the gate dielectric layer, performing an anneal process to drive fluorine atoms from the fluorine-containing layer into the gate dielectric layer, removing the fluorine-containing layer, and forming a metal gate on the gate dielectric layer.

A method for fabricating a semiconductor device includes sequentially stacking a sacrificial layer and a support layer on a substrate, forming bottom electrodes penetrating the sacrificial layer and the support layer to come into contact with the substrate, patterning the support layer to form a support pattern that connects the bottom electrodes to each other, removing the sacrificial layer to expose surfaces of the bottom electrodes, depositing a conductive layer on the exposed surfaces of the bottom electrodes and a surface of the support pattern, and etching the conductive layer. The etching the conductive layer includes selectively removing the conductive layer on the support pattern to expose the surface of the support pattern. The depositing the conductive layer and the etching the conductive layer are alternately performed in a same chamber.

Provided are a composition, a method of treating a metal-containing layer by using the same, and/or a method of manufacturing a semiconductor device by using the same. The composition may include an oxidizing agent, an acid, and an etching controller, wherein the etching controller may include at least one compound represented by Formula 1:

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A description of Formula 1 is provided in the specification of the present application.

A method of manufacturing a semiconductor device is provided, the method including: forming an insulating film on a semiconductor substrate; selectively removing the insulating film; forming a metal film on the semiconductor substrate by leaving a damage layer of a surface of the semiconductor substrate, the damage layer being generated when the insulating film is selectively removed; forming an electrode by selectively removing the metal film; and forming polyimide on the electrode. The damage layer of the surface of the semiconductor substrate, which is generated when the insulating film is selectively removed, may be selectively removed.

A substrate processing method includes immersing a substrate in an alkaline processing liquid and etching, by the processing liquid, a polysilicon layer filled in a recess portion of columnar shape extending substantially perpendicular to a principal surface of the substrate, and in etching the polysilicon layer, bubbles generated inside the recess portion are removed.

A substrate processing method includes a first oxidation step of heating a substrate at a first temperature by irradiation of light of a first intensity while supplying an oxygen gas or an ozone gas to the substrate, a first etching step of supplying an etching liquid to the substrate to make a surface layer of a molybdenum film that changed to molybdenum trioxide dissolve in the etching liquid, a second oxidation step of heating the substrate at a second temperature by irradiation of light of a second intensity while supplying the oxygen gas or the ozone gas to the substrate, and a second etching step of supplying the etching liquid to the substrate to make the surface layer of the molybdenum film that changed to the molybdenum trioxide dissolve in the etching liquid.

An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.