An object is to provide an etchant which has an excellent etching rate and can suppress roughness of a surface of a molybdenum-containing substance after an etching treatment. The etchant of the present invention is an etchant used for a molybdenum-containing substance, the etchant containing a quinone compound having a quinone structure and a solvent.

Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

In a method for preparing silicon-on-insulator, the first etching stop layer, the second etching stop layer, and the device layer are formed bottom-up on the p-type monocrystalline silicon epitaxial substrate, where the first etching stop layer is made of intrinsic silicon, the second etching stop layer is made of germanium-silicon alloy, and the device layer is made of silicon. After oxidation, bonding, reinforcement, and grinding treatment, selective etching is performed. Through a first selective etching to p+/intrinsic silicon, the thickness deviation of the first etching stop layer on the second etching layer is controlled within 100 nm, and then through the second etching and the third etching, the thickness deviation and the surface roughness of the finally prepared silicon-on-insulator film can be optimized to less than 5 nm and less than 4 , respectively, so as to realize the flatness of the silicon-on-insulator film.

Various embodiments of methods are provided for etching titanium nitride (TiN) and other transition metal nitride materials in a wet ALE process. The methods disclosed herein use a wide variety of wet etch chemistries to: (a) halogenate a TiN surface and form a self-limiting, titanium halide or titanium oxyhalide passivation layer in a surface modification step of the wet ALE process, and (b) selectively remove the titanium halide or titanium oxyhalide passivation layer in a dissolution step of the wet ALE process. In the embodiments disclosed herein, a surface modification solution containing a halogenation agent dissolved in non-aqueous solvent is used to form a self-limiting, titanium halide or titanium oxyhalide passivation layer, which is selectively removed in an acidic dissolution solution via reactive dissolution.

A substrate processing apparatus includes: a plurality of roller pairs configured to place a plurality of substrates, respectively, wherein the substrates are arranged side by side in a horizontal direction with a predetermined interval, and rotate the plurality of substrates, respectively, in a circumferential direction; a first, second, and third circulation groove that are disposed along outer peripheral portions of each of the plurality of substrates; a chemical solution supplier configured to supply a chemical solution to the outer peripheral portions of the plurality of substrates through the first circulation groove; a rinse solution supplier configured to supply a rinse solution to the outer peripheral portions of the plurality of substrates through the second circulation groove; and a fluid supplier configured to supply a fluid for drying the rinse solution to the outer peripheral portions of the plurality of substrates through the third circulation groove.

Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivity of the silicon nitride etching operation in the presence of polysilicon.

Provided are a composition, a method of treating a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same, the composition including an oxidizing agent, an ammonium-based buffer, and an etching controller, wherein the etching controller includes a compound represented by Formula 1. A description of Formula 1 is provided in the specification.

Provided is an etching solution composition that can have both a higher etch selectivity of silicon nitride and a reduction in the deposition of silica on the surface of silicon oxide. An inorganic acid-based etching solution composition for selectively etching away silicon nitride from a semiconductor containing silicon nitride and silicon oxide, the etching solution composition comprising: (a) an etch inhibitor that reduces etching of silicon oxide; and (b) a deposition inhibitor that reduces deposition of silica on a surface of silicon oxide.

Methods are provided for etching molybdenum in a wet ALE process. The methods disclosed herein use a wide variety of techniques and wet etch chemistries to oxidize a molybdenum surface and form a self-limiting, molybdenum oxide passivation layer in a surface modification step of the wet ALE process. In the wet ALE processes and methods disclosed herein, self-limiting behavior is provided in the oxidation step by adding a polydentate ligand to an aqueous oxidizing solution. The polydentate ligand reacts with and binds to the oxidized molybdenum surface to form a stable, ligand-molybdenum oxide complex, which is insoluble within the aqueous oxidizing solution. The insolubility of the ligand-molybdenum complex in the aqueous oxidizing solution provides self-limiting behavior in the oxidation step. After forming the molybdenum oxide passivation layer, the passivation layer is selectively removed in a dissolution step of the wet ALE process to etch the molybdenum surface.

New methods are provided for conditioning a surface of a material to be etched prior to etching the material. More specifically, the present disclosure provides various embodiments of methods for conditioning a surface of a metal layer prior to etching the metal layer using etch chemistry optimized for the bulk metal layer. In some embodiments, the techniques disclosed herein may be used to condition a surface of a ruthenium (Ru) layer prior to etching the ruthenium layer using halogenating etch chemistries in a wet atomic layer etching (ALE) process.