A plasma processing system is provided. The system comprises a plasma processing apparatus, a transfer apparatus connected to the plasma processing apparatus, and a controler. The plasma processing apparatus includes a substrate support including a support unit for a substrate as well as an annular member disposed to surround the substrate. The substrate support includes a plurality of insertion holes passing through the support unit, lifters to elevate/lower the annular member through the holes insertion and a temperature adjustment mechanism for adjusting a temperature of the support unit. The transfer apparatus includes a transfer mechanism for transferring the annular member to the substrate support. The annual member has includes concave portions in its bottom surface, into which upper end the lifters are fitted.

The present invention relates to a component for a semiconductor manufacturing apparatus, and a heat-resistant material, and the component for a semiconductor manufacturing apparatus, according to the present invention, has a level difference with a plurality of layers on a cross-section thereof, wherein the plurality of layers includes a first surface exposed to plasma and a second surface loaded on the semiconductor manufacturing apparatus.

A clamp assembly includes at least one clamp which is provided to clamp a workpiece in electroless plating, etching, electroplating or cleaning process. The clamp includes a base, a clamping element and a limiting element. The base is mounted on a carrier and includes a guide hole and a first limiting hole which are communicated with each other. The clamping element includes a guide rod and a second limiting hole, the guide rod is inserted into the guide hole to allow the second limiting hole located on the guide hole to be communicated with the first limiting hole. The limiting element is inserted into the first and second limiting holes to integrate the base with the clamping element for clamping the workpiece.

A wafer cleaning apparatus may include: a center chuck configured to adhere a center of one surface of a wafer and rotate around a center axis of the center chuck, that extends in a first direction, to rotate the wafer; a side chuck including at least one grip part configured to support an edge of the one surface of the wafer; a housing including a guide part configured to guide the side chuck to move horizontally in a second direction perpendicular to the first direction; and at least one nozzle part configured to spray a cleaning solution toward the one surface of the wafer.

Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.

A universal ring wafer support apparatus that includes at least one raised support to securely support different size wafers above and separated from the main body to enable dust particles and other contaminants to flow away from a wafer and through the main body to a back side thereof. The universal ring wafer support apparatus and the at least one raised support are formed of a highly conductive material while a top surface of the at least one raised support includes contact material(s) having a high gripping force to raise, grip and securely support a wafer thereon.

Disclosed is a substrate processing apparatus capable of checking an etch amount of a ring member without opening a chamber. The substrate processing apparatus using plasma includes a process chamber defining a process space, a chuck located in the process space to support a substrate from below, a ring member located around the chuck, a ring lifting device configured to raise and lower the ring member, and a controller configured to measure an etch amount of the ring member and to adjust the height of the ring member based on the etch amount using the ring lifting device. A substrate-type sensor device including a laser light source and a camera is located in the process space. The laser light source irradiates the chuck and the ring member. The camera captures an image including the chuck and the ring member and transmits the image to the controller for etch amount measurement.

A vapor phase growth apparatus of embodiments includes: a reactor; a holder provided in the reactor to place a substrate thereon; an annular out-heater provided below the holder; an in-heater provided below the out-heater; a disk-shaped upper reflector provided below the in-heater and formed of pyrolytic graphite; and a disk-shaped lower reflector provided below the upper reflector, formed of silicon carbide, and having a thickness smaller than that of the upper reflector.

A method includes arranging a first edge ring around a pedestal and a second edge ring around the pedestal under the first edge ring, determining first and second number of hours for which the first and second edge rings are exposed to RF power supplied during substrate processing, determining first and second rates at which the first and second edge rings erode during substrate processing, determining first and second amounts by which to compensate a height of the first edge ring based on the first and second number of hours and the first and second rates, compensating the height of the first edge ring based on erosion of the first and second amounts, and moving the first edge ring relative to the pedestal during substrate processing according to the compensated height, which is equal to a sum of the first and second amounts.

A moveable edge ring system for a substrate processing system includes a top moveable ring including a first annular body arranged around a substrate support. The top moveable ring is exposed to plasma during substrate processing. A moveable support ring is arranged below the top moveable ring and radially outside of a baseplate of the substrate support and includes a second annular body. A shield ring is arranged radially outside of the moveable support ring and includes a third annular body. A cover ring includes a fourth annular body arranged above a radially outer edge of the top moveable ring. An actuator and a lift pin are configured to adjust a position of the top moveable ring and the moveable support ring relative to the shield ring and the cover ring.