An embodiment of an apparatus may include a chuck body, and a surface formed on the chuck body to hold a wafer, where the surface has a non-flat shape. Other embodiments are disclosed and claimed.

A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.

A substrate handling system includes a fixed deposition ring having a plurality of circumferentially spaced notches along an outer edge of the fixed deposition ring, the fixed deposition ring being electrically non-conductive; a moving deposition ring having a plurality of circumferentially spaced recesses formed on a lower surface of the moving deposition ring, the recesses configured to radially align with the notches of the fixed deposition ring, the moving deposition ring having an inner edge and an outer edge, the moving deposition ring being electrically non-conductive; and a plurality of electrically conductive grounding plates each having a base, an intermediate member, and a contact extending from the intermediate member and being spaced from the base, the intermediate members configured to be received in the recesses and extend between the inner edge and the outer edge of the moving deposition ring.

An apparatus for plasma processing comprises: a support configured to support a substrate and an edge ring disposed around the substrate; a lifting mechanism configured to vertically move the edge ring; and a controller. The support includes a convex portion which protrudes upward and on which the substrate is mounted, a ring mounting portion on which the edge ring is mounted in a state in which the convex portion is inserted into the hole of the edge ring, and a temperature adjustment mechanism configured to adjust a temperature of the convex portion. The lifting mechanism and the temperature adjustment mechanism are configured to move the edge ring to a predetermined position at which the convex portion is in a state of being inserted into the hole of the edge ring and heat the convex portion of the support to expand it in a diametric direction thereof.

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

An apparatus including a drive, a first robot arm, a mechanical drive transmission, and a second robot arm. The first robot arm includes a first upper arm, a first forearm and a first end effector, where the first upper arm is connected to the drive at a first axis of rotation, and where the first end effector comprises two laterally spaced substrate holding areas. The mechanical drive transmission connects the drive to the first forearm at a first joint between the first upper arm and the first forearm for the drive to rotate the first forearm, where the mechanical drive transmission includes at least one non-circular pulley and a first band. The second robot arm includes a second upper arm, a second forearm and a second end effector, where the second upper arm is connected to the drive at the first axis of rotation.

A component in a semiconductor processing chamber is provided. An electrically conductive semiconductor or metal body has a CTE of less than 10.010.sup.6/K. An intermediate layer is disposed over at least one surface of the body, the intermediate layer comprising a fluoropolymer. A perfluoroalkoxy alkane (PFA) layer is disposed over the intermediate layer to form the component.

A planarization system is provided. The planarization system includes a first substrate chuck which holds the substrate during a planarization step, and a second substrate chuck which holds the substrate with a non-flat configuration during a separation step.

A wafer positioning ring device includes a polishing ring that has a polishing ring inner surface surrounded by a polishing ring outer surface, a connecting ring that has a connecting ring inner surface surrounded by a connecting ring outer surface, and a positioning unit. The positioning unit includes first positioning members that are disposed on one of the polishing ring outer surface of the polishing ring and the connecting ring inner surface of the connecting ring, and second positioning members that are disposed on another one of the polishing ring outer surface of the polishing ring and the connecting ring inner surface of the connecting ring. The second positioning members and the first positioning members are detachably and respectively connected to each other such that the connecting ring is positioned to the polishing ring.