A molding apparatus including a template apparatus is configured to bring the template into contact with a curable composition arranged on a substrate and to cure the curable composition. The template includes a planarization coating layer of which a site front least squares range (SFQR) is 20 nm or less in a contact surface which is a surface of the template in contact with the curable composition.

A method of manufacturing a semiconductor device includes forming a first tone resist layer over an underlayer. The first tone resist layer is pattern to form a first pattern exposing a portion of the underlayer. The first pattern is extended into the underlayer, and the first tone resist layer is removed. A second tone resist layer is formed over the underlayer, wherein the second tone is opposite the first tone. The second tone resist layer is patterned to form a second pattern exposing another portion of the underlayer. The second pattern is extended into underlayer, and the second tone resist layer is removed.

Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.

Provided is a composition containing a solvent (I); and a cellulose derivative having a constituent unit or a salt thereof (II).

The present invention relates to a random copolymer comprising repeat units of structure (I), (II), (III), and (IV). The invention also pertains to a neutral layer composition comprised of said random copolymer and also pertains to the use of said neutral layer composition to make a crosslinked neutral layer film on a substrate, which can enable self-assembly of a film of a block copolymer overlying said crosslinked neutral layer, wherein said block copolymer contains etch resistant and etchable block, and whose self-assembled pattern is used, through etching, to create either an array of contact holes or posts in said substrate. ##STR00001##

Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1: ##STR00001##

According to one embodiment, a pattern forming method includes forming a first resin pattern on a substrate with a first resin. The first resin pattern includes a first transfer pattern and a first mark. A second resin is dispensed to cover the first mark of the first resin pattern. A first pattern is formed including the first transfer pattern and the second resin covering the first mark. The first pattern is then transferred to a first process film on the substrate.

According to one embodiment, a pattern forming method includes forming a first resin pattern on a substrate with a first resin. The first resin pattern includes a first transfer pattern and a first mark. A second resin is dispensed to cover the first mark of the first resin pattern. A first pattern is formed including the first transfer pattern and the second resin covering the first mark. The first pattern is then transferred to a first process film on the substrate.

A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer is exposed. An organic treatment is performed to the photoresist layer by a hydrophobic organic compound. After performing the organic treatment, the photoresist layer is developed. The material layer is etched using the photoresist layer as a mask.

Disclosed are two different block copolymer families having general structures (I) or (III), composition thereof, and the process of using these compositions for DSA; wherein B segment and B.sub.1 segment are polar block copolymer segments comprising either alkyl 2-methylenealkanoate derived repeating units, lactone derived repeat units, oxirane derived repeat units, oxetane or cyclic carbonate derived repeat units; L and L.sub.1 are either a direct valence bond or a linking moiety derived from a 1,1-diarylethene; A segment and A.sub.1 are non-polar block copolymer segment comprising styrenic repeat unit, E, E E.sup.3 and E.sup.4 are different types of end groups, A.sub.2 is a block segment derived from an olefin or a diene having a T.sub.g of about 5 C. to about 50 C., and in structure (I) is multi-tethered with oligo flexible tethered groups at various positions as outlined. E-A-L-B-E (I) E.sup.3-A.sub.1-A.sub.2-L.sub.1-B.sub.1-E.sup.4 (III)