A composition for spin coating contains a polymerizable compound containing at least silicon atoms, and a solvent, wherein a viscosity of a material obtained by removing the solvent from the composition is not less than 10 mPa.Math.s and not more than 1,000 mPa.Math.s, and a content of the silicon atoms in the material obtained by removing the solvent from the composition is not less than 30 wt %.

A manufacturing method of a semiconductor device includes preparing a semiconductor substrate having an upper surface and a lower surface, forming a first mask having a plurality of openings on the upper surface divided into a first region and a second region, forming a second mask that exposes a portion of the first mask arranged in the first region and covers a portion arranged in the second region, etching the semiconductor substrate in the first region using the first mask and the second mask as a mask, removing the second mask, and etching the semiconductor substrate in the first region and the second region using the first mask as a mask.

A method of microfabrication includes providing a substrate having an existing pattern, wherein the existing pattern comprises features formed within a base layer such that a top surface of the substrate has features uncovered and the base layer is uncovered, depositing a selective attachment agent on the substrate, wherein the selective attachment agent includes a solubility-shifting agent, depositing a first resist on the substrate, activating the solubility shifting agent such that a portion of the first resist becomes insoluble to a first developer, developing the first resist using the first developer such that a relief pattern comprising openings is formed, wherein the openings expose the features of the existing layer, and executing a selective growth process that grows a selective-deposition material on the features and within the openings of the relief pattern to provide self-aligned selective deposition features.

A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber. Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern. Therefore, a residue is not remained when the mask pattern is removed to prevent a defect caused by the residue from being generated.

A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include an organometallic compound; a compound represented by Chemical Formula 1; and a solvent. The description of Chemical Formula 1 is as provided in more detail in the present disclosure.

A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8. ##STR00001##

Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.

START PLACE STACK IN CHAMBER ON SUPPORT COOL SUPPORT FLOW HF ETCH GAS INTO CHAMBER FORUM ETCH GAST INTO PLASMA EXPOSE STACK TO PLASMA SELECTIVELY ETCH STACK REMOVE STACK FROM CHAMBER

A method of forming a device includes forming a patterned resist layer over a substrate using an extreme ultraviolet (EUV) lithography process. The method includes forming a mandrel in a plasma processing chamber by selectively depositing a mandrel material over the patterned resist layer, the mandrel including the patterned resist layer and the mandrel material.

A method of forming a device includes forming a patterned resist layer over a substrate using an extreme ultraviolet (EUV) lithography process. The method includes forming a mandrel in a plasma processing chamber by selectively depositing a mandrel material over the patterned resist layer, the mandrel including the patterned resist layer and the mandrel material.