A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.

Methods, systems, and structures relating to flip-chip bonding are described. A processor can determine a plurality of target solder volumes to be deposited on a plurality of pads on a surface of a substrate. The plurality of target solder volumes can be variable among the plurality of pads. The processor can determine different thicknesses of different portions of a layer of resist to be deposited across the surface of the substrate. The different thicknesses can define a plurality of solder resist openings having sizes that comply with the plurality of target solder volumes.

A method of marking information on a substrate for use in a semiconductor component is provided. The method comprises providing a substrate for use in a semiconductor component, providing a metal layer on a surface of the substrate, and providing a marking within the metal layer. A method of making a die, a radio-frequency module and a wireless mobile device; as well as a substrate, a die, a radio-frequency module and a wireless mobile device is also provided.

A semiconductor structure includes a first dielectric layer, a first via and a second via disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, the first via, and the second via, a first conductive line disposed on the first via and in a bottom portion of the second dielectric layer, a second conductive line disposed on the second via and in the bottom portion of the second dielectric layer, a first barrier layer extending along sidewalls and a top surface of the first conductive line, and a second barrier layer extending along sidewalls and a top surface of the second conductive line. The bottom portion of the second dielectric layer includes an air gap between the first conductive line and the second conductive line.

includes forming a protective layer over a substrate edge and a photoresist over layer removed and photoresist exposed to radiation. Protective layer including acid generator and polymer having pendant acid-labile groups. groups include polar functional groups; acid-labile groups including polar groups; acid-labile groups, wherein greater than 5% of pendant acid-labile groups have structure R1 is C6-C30 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, cycloalkyl carboxyl group, saturated or unsaturated hydrocarbon ring, or heterocyclic group; and R2 is C4-C9 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, or cycloalkyl carboxyl group; polymer having pendant acid-labile groups and lactone pendant groups; or polymer having pendant acid-labile groups and carboxylic acid groups.

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A stepped substrate coating composition includes: a compound (E) containing partial structures (I) and (II) and a solvent (F). The partial structure (II) contains a hydroxy group generated by an epoxy group and a proton-generating compound reaction; the partial structure (I) is at least one partial structure selected from partial structures of Formula (1-1) to Formula (1-5) or a partial structure combining a partial structure of Formula (1-6) and Formula (1-7) or Formula (1-8); and the partial structure (II) is a partial structure of Formula (2-1) or Formula (2-2). The photocurable stepped substrate coating composition wherein in the compound (E), the epoxy group and the hydroxy group are contained in a molar ratio of 0(Epoxy group)/(Hydroxy group)0.5 and the partial structure (II) is contained in a molar ratio of 0.01(Partial structure (II))/(Partial structure (I)+Partial structure (II))0.8.

A method of forming sub-resolution features that includes: exposing a photoresist layer formed over a substrate to a first ultraviolet light (UV) radiation having a first wavelength of 365 nm or longer through a mask configured to form features at a first critical dimension, the photoresist layer including first portions exposed to the first UV radiation and second portions unexposed to the first UV radiation after exposing with the first UV radiation; exposing the first portions and the second portions to a second UV radiation; and developing the photoresist layer after exposing the photoresist layer to the second UV radiation to form the sub-resolution features having a second critical dimension less than the first critical dimension.

A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. The composition for forming an EUV resist underlayer film has a basic organic group substituted with a protective group on a side chain of a (meth)acrylic polymer and further includes a solvent, but does not include a polymer other than the (meth)acrylic polymer. The organic group is an acyloxy group that has an amino group substituted with a protective group, or that has a nitrogen-containing heterocycle substituted with a protective group.

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition.

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Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an organometallic compound, a compound including at least one nitro group and at least one hydroxyl group, and a solvent.