A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.

An etching and deposition system including a process chamber containing a platen for supporting a substrate, an reactive-ion etching (RIE) source adapted to produce an ion beam and to direct the ion beam into the process chamber for etching the substrate, a first plasma enhanced chemical vapor deposition (PECVD) source located on a first side of the RIE source, the first PECVD source adapted to produce a first radical beam and to direct the first radical beam into the process chamber for depositing a first material, and a second PECVD source located on a second side of the RIE source opposite the first side, the second PECVD source adapted to produce a second radical beam and to direct the second radical beam into the process chamber for depositing a second material.