A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Embodiments of the present invention provide a method for removing a barrier layer of a metal interconnection on a wafer, which remove a single-layer metal ruthenium barrier layer. A method comprises: oxidizing step, is to oxidize the single-layer metal ruthenium barrier layer into a ruthenium oxide layer by electrochemical anodic oxidation process; oxide layer etching step, is to etch the ruthenium oxide layer with etching liquid to remove the ruthenium oxide layer. The present invention also provides a method for removing a barrier layer of a metal interconnection on a wafer, using in a structure of a process node of 10 nm and below, wherein the structure comprises a substrate, a dielectric layer, a barrier layer and a metal layer, the dielectric layer is deposited on the substrate and recessed areas are formed on the dielectric layer, the barrier layer is deposited on the dielectric layer, the metal layer is deposited on the barrier layer, wherein the metal layer is a copper layer, the barrier layer is a single-layer metal ruthenium layer, and the method comprises: thinning step, is to thin the metal layer; removing step, is to remove the metal layer; oxidizing step, is to oxidize the barrier layer, and the oxidizing step uses an electrochemical anodic oxidation process; oxide layer etching step, is to etch the oxidized barrier layer.

A method of forming a semiconductor device includes forming a transistor comprising a gate stack on a semiconductor substrate by, at least, forming a first dielectric layer on the semiconductor substrate, forming a dipole layer on the dielectric layer; forming a second dielectric layer on the dipole layer, forming a conductive work function layer on the second dielectric layer, forming a gate electrode layer on the conductive work function layer. The method also includes varying a distance between dipole inducing elements in the dipole layer and a surface of the semiconductor substrate by tuning a thickness of the first dielectric layer to adjust a threshold voltage of the transistor.

A method for manufacturing a semiconductor device includes: forming a semiconductor structure on a semiconductor substrate, the semiconductor structure including first and second source/drain regions disposed on the semiconductor substrate in a first direction and spaced apart from each other in a second direction transverse to the first direction, and a plurality of channel features disposed between and connected to the first and second source/drain regions and spaced apart from one another in the first direction; forming an interfacial material layer to cover the channel features; forming a metal oxide layer on the interfacial material layer; converting a portion of the interfacial material layer into a metal silicate layer so as to form a plurality of interfacial features respectively covering the channel features, the metal silicate layer being formed between the metal oxide layer and the interfacial features; and removing the metal oxide layer and the metal silicate layer.