A temporary fixation substrate, peeled from a predetermined object to be fixed after once the predetermined object to be fixed is temporarily fixed to one main surface thereof, includes: a thin region being an annular region having a predetermined width from a lateral end; and a first thickness-reduced portion having been recessed from the one main surface on a side of the one main surface in the thin region, wherein a thickness in the thin region is smaller than a thickness in a region other than the thin region, and a difference between a thickness at the lateral end and the thickness in the region other than the thin region is 1 m to 5 m.

There is provided a release agent composition for photoirradiation release, containing: a Novolac resin, a (meth)acrylic acid ester-based polymer, and a solvent.

Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material. At least one of the first surface and the second surface includes a region of hydrophobic material electrically isolated from any circuitry of the first semiconductor device and configured to have a reduced bonding strength to a facing region relative to the dielectric-dielectric bond. The method can further include stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly, and removing the semiconductor device assembly from the carrier wafer.

Methods, systems, and devices for manufacturing technique for mechanical debonding of a carrier wafer from other structures in a stacked semiconductor system are described. The carrier wafer may include a first bonding layer that includes a first plurality of cavities. The stacked semiconductor system may also include a device wafer with a second bonding layer that is fusion bonded with the first bonding layer of the carrier wafer. The second bonding layer of the device wafer may include a second plurality of cavities.

A dry adhesive microfiber array comprising a plurality of fibers with enlarged tips, where the dry adhesive is capable of adhering to a surface of a silicon wafer and/or carrier, in which the dry adhesive can be debonded without the use of chemicals or heat and does not leave a residue on the surface of the wafer, and, a liquid can be introduced to the interface between the dry adhesive and semiconductor device to adjust the force of adhesion.

A panel-level semiconductor package structure is provided. The panel-level semiconductor package structure includes a panel-level substrate structure and at least one wafer-level package structure. The panel-level substrate structure has a first side and a second side opposite to the first side. The wafer-level package structure is bonded over the panel-level substrate structure. Each of the wafer-level package structures includes a first redistribution layer (RDL) over the elastomeric connector and a plurality of first semiconductor devices laterally disposed over the first RDL. A method for manufacturing a panel-level substrate structure is also provided.

A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

A cutting apparatus for dividing a wafer that is stuck to an adhesive tape in which the adhesive layer is cured by ultraviolet light and that is supported by an annular frame through the adhesive tape, into individual chips, includes: a holding unit having a frame support section that supports the annular frame, and a wafer table that is formed of a transparent body and supports the wafer; a cutting unit including, in a rotatable manner, a cutting blade for cutting the wafer; and an ultraviolet light applying unit that applies ultraviolet light, the ultraviolet light applying unit being disposed facing the cutting blade in such a manner that the wafer table is interposed therebetween. The ultraviolet light applying unit applies ultraviolet light to a region where the wafer is to be cut by the cutting blade, to form a cured region where the adhesive layer is cured.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

A back grinding adhesive film used to protect a surface of a wafer, the back grinding adhesive film including a base material layer, and an adhesive resin layer which is formed on one surface side of the base material layer and configured with an ultraviolet curable adhesive resin material, in which, when a viscoelastic characteristic is measured after curing the ultraviolet curable adhesive resin material by irradiating with an ultraviolet ray, a storage elastic modulus at 5 C. E (5 C.) is 2.010.sup.6 to 2.010.sup.9 Pa, and a storage elastic modulus 100 C. E (100 C.) is 1.010.sup.6 to 3.010.sup.7 Pa.