Patent classifications
H10W72/07337
METHOD FOR PRODUCING A DIE ATTACH ADHESIVE FILM SHEET
Provided herein is a method for producing a die attach adhesive film sheet, comprising: Providing a first release substrate layer, a die attach adhesive layer, and a dicing tape layer, and joining the first release substrate layer, the die attach adhesive layer, and the dicing tape layer in that order to form a multi-layer structure; Working the multi-layer structure to form a circular preformed die attach adhesive film sheet, wherein during said working the first release substrate receives a z-directional indentation therein; and Removing the first release substrate with the z-directional indentation therein from the die attach adhesive layer, and placing in its stead a second release substrate in contact with the die attach adhesive layer.
Integrated chip package including a crack-resistant lid structure and methods of forming the same
A chip package structure includes an assembly containing an interposer and semiconductor dies; a packaging substrate attached to the assembly through solder material portions; and a lid structure attached to the packaging substrate. The lid structure includes: a first plate portion having a first thickness and located in an interposer-projection region having an areal overlap with the interposer in a plan view; a second plate portion having a second thickness that is less than the first thickness, laterally surrounding, and adjoined to, the first plate portion, and located outside the interposer-projection region; and a plurality of foot portions adjoined to the second plate portion, laterally spaced from the first plate portion, and attached to a respective top surface segment of the packaging substrate through a respective adhesive portion.
Microelectronic assembly with underfill flow control
A microelectronic assembly comprises a first microelectronic component; a second microelectronic component under an area of the first microelectronic component and coupled to the first component through first interconnect structures within a central region of the area, and second interconnect structures within a peripheral region of the area, adjacent to the central region. A heterogenous dielectric surface on the first or second component or both and within a gap between the first and second components has a first surface composition within the central region and at least a second surface composition within the peripheral region.
Package structure with antenna element
A package structure is provided. The package structure includes a dielectric structure and an antenna structure disposed in the dielectric structure. The package structure also includes a semiconductor device disposed on the dielectric structure and a protective layer surrounding the semiconductor device. The package structure further includes a conductive feature electrically connecting the semiconductor device and the antenna structure. A portion of the antenna structure is between the conductive feature and the dielectric structure.
Stacking via structures for stress reduction
A method includes forming a first dielectric layer, forming a first redistribution line comprising a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes forming a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, with a first center of conductive pad being offsetting from a second center of the conductive bump. The second via is further offset from the second center of the conductive bump.
SEMICONDUCTOR DIE WITH SENSOR SECTION LOCATED AT THE EDGE
A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microclectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.
CONNECTOR
The present disclosure relates to an electronic device comprising a wafer comprising a first upper surface having at least one first contact arranged thereon; and at least one die comprising a second upper surface having at least one second contact arranged thereon, and at least one first lateral surface orthogonal to the second upper surface, said first contact being coupled to said second contact by a connector comprising one first conductive pillar formed on said first contact of said wafer; one second conductive pillar formed on said second contact of said die; and at least one conductive ball positioned in contact with at least a first upper portion of said first pillar(s) and in contact with at least one second upper portion of said second pillar(s).
Electronic component placed on core of substrate
In an aspect, a substrate includes a core that includes a core dielectric and a first conductive pattern on a first surface of the core dielectric, and a first metallization structure over the first surface of the core dielectric. The first metallization structure includes a first dielectric, and the first dielectric has a first opening formed therein. The substrate further includes a first electronic component disposed in the first opening of the first dielectric, and a first adhesive layer coupling the first electronic component with the core.
Stacked semiconductor method and apparatus
A manufacturing method of a chip package, performing a coupling of first and second interconnecting layers between one or more top dies and one or more bottom dies via hybrid copper bonding; depositing a material to at least partially cover the second interconnecting layer; thinning a second surface of the one or more top dies, wherein both the one or more top dies and the material define a continuous surface; coupling a first surface of a support die to the second surface of at least one of the one or more top dies; thinning a second surface of at least one of the one or more bottom dies; and coupling the second surface of at least one of the one or more bottom dies to a plurality of microbumps.
INTEGRATED CHIP PACKAGE INCLUDING A CRACK-RESISTANT LID STRUCTURE AND METHODS OF FORMING THE SAME
A chip package structure includes an assembly containing an interposer and semiconductor dies; a packaging substrate attached to the assembly through solder material portions; and a lid structure attached to the packaging substrate. The lid structure includes: a first plate portion having a first thickness and located in an interposer-projection region having an areal overlap with the interposer in a plan view; a second plate portion having a second thickness that is less than the first thickness, laterally surrounding, and adjoined to, the first plate portion, and located outside the interposer-projection region; and a plurality of foot portions adjoined to the second plate portion, laterally spaced from the first plate portion, and attached to a respective top surface segment of the packaging substrate through a respective adhesive portion.