A microfluidic transfer substrate includes a plurality of pixel groups. Each pixel group includes at least three first pixel units, and the at least three first pixel units of each pixel group are arranged around a center point. One first pixel unit of each pixel group serves as a first microfluidic pixel and a surface of the first microfluidic pixel defines an assembly groove, and the other first pixel units of each pixel group serve as second microfluidic pixels and a surface of each second microfluidic pixel is free of the assembly groove. Each first pixel unit includes a thin film transistor, a microfluidic electrode layer, and a hydrophobic layer. A microfluidic transfer device and a microfluidic transfer apparatus are further provided.

An electronic device includes a substrate, a first organic portion, a first opening, a second organic portion, a second opening, a third organic portion and a first element. In a cross-section view, the first organic portion, the first opening, the second organic portion, the second opening and the third organic portion are disposed on the substrate and arranged in a first direction, the first opening is located between the first organic portion and the second organic portion, the second opening is located between the second organic portion and the third organic portion, the second organic portion is located between the first organic portion and the third organic portion, and a width of the first organic portion and a width of the third organic portion are less than a width of the second organic portion in the first direction. The first element is overlapped with the first opening.

An integrated circuit package includes a substrate, a semiconductor interposer on the substrate, and a first integrated circuit chip on the interposer. The interposer includes a galvanic effect test structure including a test contact pad and a detection contact pad. The interposer includes a plurality of primary contact pads electrically coupled to the first integrated circuit chip. The galvanic effect structure can be utilized to test the interposer for galvanic corrosion prior to assembling the interposer into the integrated circuit package.

Provided are a semiconductor package of which yield may be improved through rescuing and a test method and a rescue method for the semiconductor package. The semiconductor package includes a base chip, a plurality of memory chips stacked on the base chip, and a deactivation controller configured to deactivate the memory chips, wherein the memory chips are classified into at least two stack-ID (SID) regions, each of the at least two SID regions includes a subset of the plurality (set number) of memory chips, and, when a fail-SID region including a failed memory chip, from among the at least two SID regions, exists, the deactivation controller is configured to deactivate all memory chips included in the fail-SID region, and activate memory chips in remaining SID regions other than the fail-SID region.

A method of forming a semiconductor device includes: forming a conductive pad over and electrically coupled to an interconnect structure, where the interconnect structure is disposed over a substrate and electrically coupled to electrical components formed on the substrate; forming a passivation layer over the conductive pad and the interconnect structure; and forming a sacrificial test structure over the passivation layer and electrically coupled to the conductive pad, where the sacrificial test structure includes a sacrificial pad extending along an upper surface of the passivation layer distal from the substrate, and includes a sacrificial via extending into the passivation layer and contacting the conductive pad.

A display device and a test method of the display device are discussed. The display device can include a substrate having a display region and a non-display region, a circuit layer disposed in the display region and the non-display region, a plurality of banks disposed on the circuit layer, and a plurality of pixels each including a plurality of light-emitting elements disposed on the plurality of banks in the display region. The first electrodes of the plurality of pixels are connected to the anode electrodes of the plurality of light-emitting elements, and the second electrodes of the plurality of pixels are connected to the cathode electrodes of the plurality of light-emitting elements. Adjacent second electrodes of the pixels are disposed to face each other and are spaced apart from each other.

A capacitor module includes a first die and a second die. Each of the first die and the second die includes a capacitor device and a circuit structure electrically connected to the capacitor device. The circuit structure includes a pad and a first signal line. The first signal line includes a first pad connection portion and a first signal transmission portion. The first pad connection portion is located below the pad and is electrically connected to the pad. The first signal transmission portion is electrically connected to the capacitor device. The first signal line of the first die further includes first fuses connecting the first pad connection portion and the first signal transmission portion. The first signal line of the second die is broken, so that the first pad connection portion of the second die is electrically separated from the first signal transmission portion.

A laser repair method includes a repair process of performing repair work by setting a laser radiation range for a defect part in a multi-layer film substrate and irradiating the defect part with a laser beam under set laser working conditions. In the repair process, spectrum data of the defect part is acquired, and the laser working conditions of the laser beam, with which the defect part is to be irradiated, are set using a neural network after learning on the basis of the spectrum data, and the neural network has undergone machine learning using, as learning data, measurement data including multi-layer film structure data, spectrum data of each multi-layer film structure, and laser working experimental data of each multi-layer film structure.

A manufacturing method of an electronic device includes following steps: (a) providing an electronic panel, wherein the electronic panel includes a first substrate and a plurality of electronic elements, and the plurality of electronic elements are bonded on the first substrate; (b) inspecting the electronic panel, wherein when the electronic panel is determined to be a defective product, perform following step (c) to step (f); (c) debonding the plurality of electronic elements from the first substrate; (d) transferring the plurality of electronic elements to a temporary substrate; (e) transferring the plurality of electronic elements from the temporary substrate to a second substrate; and (f) bonding the plurality of electronic elements on the second substrate.

Described are a solar panel manufacturing method and apparatus. The manufacturing method comprises: placing a first sheet on a glass substrate; arranging a plurality of cell strings on the first sheet placed on the glass substrate; performing an inspection for the arranged plurality of cell strings to detect a defective cell string; replacing the defective cell string with a new cell string when the defective cell string is detected; and joining bus bars for electrically connecting the plurality of cell strings, and sequentially placing a second sheet and a backsheet.