A system of processing a substrate includes an atmospheric-pressure transfer chamber, at least one vacuum processing chamber, at least two load-lock modules, a vacuum transfer chamber, a plurality of load ports, and a first transfer mechanism and a second transfer mechanism. The load ports are attached to the atmospheric-pressure transfer chamber and detachable containers are mounted on the load ports, respectively. A controller controls the first transfer mechanism and the second transfer mechanism to concurrently transfer a used consumable from the containers to the vacuum processing chamber through the atmospheric-pressure transfer chamber and one of the load-lock modules and to transfer a used consumable from the vacuum processing chamber through the vacuum transfer chamber and another one of the load-lock modules.

A load port mounting position adjustment mechanism is capable of adjusting a mounting position of a load port on a wall surface of a transfer chamber, and includes: an X-axis adjustment part configured to adjust the position of the load port in a width direction of the wall surface; a Y-axis adjustment part configured to adjust the position of the load port in a thickness direction of the wall surface; and a Z-axis adjustment part configured to adjust the position of the load port in a height direction of the wall surface. A three-axis adjustment mechanism that integrates the X-axis, the Y-axis, and the Z-axis adjustment parts is mounted to the wall surface by using a mounting hole formed in either an upper section or a middle section of the wall surface. This improves the workability of mounting the load port to the wall surface with a high precision.

The substrate treating apparatus includes a liquid supply unit for supplying a treating liquid to a substrate supported by a support unit, the liquid supply unit includes a nozzle member for discharging the treating liquid; and a driving member for moving the nozzle member to a standby position and a process position, the nozzle member includes a body having a buffer space and a discharge port configured to discharge the treating liquid; and a rotation member for changing the body between a first state and a second state by a rotation, the first state is a state at which a treating liquid filled in the buffer space is maintained so the treating liquid does not flow to the discharge port, and the second state is a state at which the treating liquid filled in the buffer space is discharged to an outside of the body through the discharge port.

There is provided a substrate processing apparatus with improved throughput by reconsidering a configuration of an apparatus including a batch type module and a single wafer type module. In a single wafer processing region according to single wafer processing of a processing block of the present invention, a buffer unit to and from which both a first transfer mechanism HTR and a center robot can hand over and receive a substrate(s) is provided. Therefore, the first transfer mechanism can collectively hand over and receive processed substrates and unprocessed substrates via the buffer unit. Therefore, a potential of the first transfer mechanism is drawn out, and the substrate processing apparatus having a high throughput can be provided.

To obtain a wafer transfer device that can suppress a rise in the temperature of the inside of a wafer transfer chamber by reducing a system resistance without changing the size of the wafer transfer chamber, the present invention provides a wafer transfer device including a wafer transfer chamber including a robot configured to transfer a wafer between a FOUP configured to house the wafer and a processing chamber configured to process the wafer, a door installed for a human to enter and exit from an inside of the wafer transfer chamber, and a fan and filter unit (FFU) chamber installed above the wafer transfer chamber and configured to feed inert gas into the wafer transfer chamber, a return flow passage for the inert gas being formed in a column constituting the wafer transfer chamber and being formed by hollowing the column, to make the FFU chamber and the wafer transfer chamber communicate with each other, and a duct being provided on the wafer transfer chamber side of the door and configured such that the inert gas in the wafer transfer chamber passes through the duct and flows into the FFU chamber when the door is in a closed state.

Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures and a second plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the first plurality of apertures. Each lid stack may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures. The choke plate may define protrusions extending from each of a top and bottom surface of the choke plate that are arranged substantially symmetrically about the first aperture.

An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

There is provided a substrate processing apparatus for processing a substrate, the substrate processing apparatus including: a first processing module group including a plurality of first processing modules; a plurality of first transfer modules, each first transfer module being connected to a respective one of the plurality of first processing modules; a second processing module group including a plurality of second processing modules; and a plurality of second transfer modules, each second transfer module being connected to a respective one of the plurality of second processing modules. The plurality of first transfer modules are disposed above the plurality of second processing modules, and the plurality of second transfer modules are disposed below the plurality of first processing modules.

A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.