A manufacturing method of manufacturing a second substrate by separating, as the second substrate, a part of a small thickness portion of a first substrate including a protruding portion and the small thickness portion surrounded by the protruding portion is provided. The first substrate has one surface to which a protective member is fixed. The method includes setting an inner edge of a removal region in the small thickness portion located inward of an outer edge of a holding surface, setting an outer edge of the removal region to a middle point between the inner edge of the removal region and the outer edge of the holding surface or to a point outward of the middle point, separating the second substrate from the first substrate by removing the removal region, and peeling off the protruding portion and the small thickness portion outside of the removal region from the protective member.

A wafer processing method for removing a chamfered portion of a first wafer that includes producing a provisionally bonded wafer in which first and second wafers are weakly bonded; forming a ring-shaped modified layer by applying a laser beam to an inner side adjacent to a chamfered portion formed at an outer periphery of the first wafer of the provisionally bonded wafer, and detaching the chamfered portion from the second wafer, with the modified layer serving as a starting point; and producing a completely strongly bonded wafer by annealing the provisionally bonded wafer. The wafer processing method further includes grinding and thinning the first wafer, with the second wafer being held on a chuck table constituting a grinding apparatus, and removing the chamfered portion of the first wafer that is detached from the second wafer, with the modified layer serving as a starting point.

Provided is a method for cleaning a wafer that enables sufficient removal of cutting chips from the wafer surface. The method for cleaning a wafer includes: mounting a wafer 56 on a spinner table 4 such that a rear surface of the wafer 56 faces the spinner table 4 and a front surface 56a of the wafer 56 is exposed, the spinner table 4 being rotatable while holding the wafer 56; subjecting the front surface 56a of the wafer 56 to first cleaning with cleaning water supplied to the front surface 56a of the wafer 56, while rotating the spinner table 4; and subjecting the front surface 56a of the wafer 56 to second cleaning with ammonia water supplied to the front surface 56a of the wafer 56 using a brush. [Elected View] FIG. 6

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate formed of silicon carbide. The semiconductor substrate has a first surface and a second surface opposite to each other in a first direction, and the semiconductor substrate has a ring-shaped edge region. The method further includes forming a die on the first surface, and performing a backside grinding process on the second surface to provide a backside surface at a virtual reference plane. The ring-shaped edge region includes a sidewall surface extending in the first direction and a first edge surface being between the first surface and the sidewall surface. A reference thickness between the first surface and the virtual reference plane in the first direction is 20 m to 200 m. A first edge height of the first edge surface in the first direction is smaller than the reference thickness.

A laser processing apparatus includes a holding unit having a holding surface holding a workpiece, a beam condenser focusing a laser beam, a position adjusting unit adjusting a positional relation between the holding unit and a focused spot of the laser beam, a first rotation mechanism rotating the holding unit with a first rotational axis as a center, a second rotation mechanism rotating the holding unit or the beam condenser with a second rotational axis as a center, a crystal orientation information acquisition unit acquiring crystal orientation information for identifying a crystal orientation of the workpiece, and a controller. The controller is capable of applying the laser beam to the workpiece from the side surface side in a state in which the beam condenser faces a side surface of the workpiece and a position of the focused spot relative to the workpiece is adjusted according to the crystal orientation.