A method for producing a semiconductor body comprises providing a first semiconductor layer of SiC, introducing carbon into the first semiconductor layer so that at least a portion of the first semiconductor layer becomes at least one C-rich region, and growing a second semiconductor layer of SiC on the first semiconductor layer comprising the at least one C-rich region.

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

Disclosed is a trench-type power device and a manufacturing method thereof. The trench-type power device comprises: a semiconductor substrate; a drift region located on the semiconductor substrate; a first trench and a second trench located in the drift region; a gate stack located in the first trench; and Schottky metal located on a side wall of the second trench, wherein the Schottky metal and the drift region form a Schottky barrier diode. The trench-type power device adopts a double-trench structure, which combines a trench-type MOSFET with the Schottky barrier diode and forms the Schottky metal on the side wall of the trench, so that the performance of the power device can be improved, and the unit area of the power device can be reduced.

Disclosed is a silicon carbide MOSFET device and a manufacturing method thereof. The manufacturing method comprises: forming a source region in an epitaxial layer; forming a body region in the epitaxial layer; forming a gate structure, comprising a gate dielectric layer, a gate conductor layer and an interlayer dielectric layer; forming an opening in the interlayer dielectric layer to expose the source region; forming a source contact connected to the source region via the opening, wherein an ion implantation angle of the ion implantation process is controlled to make a transverse extension range of the body region larger than a transverse extension range of the source region, so that a channel that extends transversely is formed by a portion, which is peripheral to the source region, of the body region, and at least a portion of the gate conductor layer is located above the channel.

The present invention addresses the problem of providing a novel SiC epitaxial substrate manufacturing method and manufacturing device therefor. An SiC substrate and an SiC material, which has a lower doping concentration than said SiC substrate, are heated facing one another, and material is transported from the SiC material to the SiC substrate to form an SiC epitaxial layer. As a result, in comparison with the existing method (chemical vapour deposition), it is possible to provide an SiC epitaxial substrate manufacturing method with a reduced number of parameters to be controlled.

A silicon carbide semiconductor device includes a drift layer, a channel layer on the drift layer, the channel layer having a first conductivity type, a trench in the channel layer and a mesa adjacent to the trench, and a gate region within the trench. The gate region has a second conductivity type opposite the first conductivity type, and the gate region includes an epitaxially regrown layer. A method of forming a silicon carbide semiconductor device includes providing a drift layer, forming a channel layer on the drift layer, the channel layer having a first conductivity type, etching the channel layer to form a trench in the channel layer and a mesa adjacent to the trench, and epitaxially regrowing a gate region within the trench, wherein the gate region has a second conductivity type opposite the first conductivity type.

A silicon carbide semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a plurality of trenches, a plurality of gate electrodes respectively provided in the trenches, a first conductive film, a first electrode, a second electrode, a plurality of first high-concentration regions, a plurality of second high-concentration regions, and a second conductive film. The first semiconductor region has a first portion and a plurality of second portions respectively at positions facing the plurality of second high-concentration regions in a depth direction. The second conductive film forms a Schottky contact with the plurality of second portions of the first semiconductor region, such that each junction surface between the second conductive film and the first semiconductor region forms a Schottky barrier of a Schottky barrier diode.

Disclosed are an MPS diode device and a preparation method therefor. The MPS diode device comprises a plurality of cells arranged in parallel, wherein each cell comprises a cathode electrode, and a substrate, epitaxial layer, buffer layer, and anode electrode that are formed in succession on the cathode electrode; two active regions are formed on the side of the epitaxial layer away from the substrate; the width of forbidden band of the buffer layer is greater than the width of forbidden band of the epitaxial layer, and a material of the buffer layer and a material of the epitaxial layer are allotropes; and first openings are formed at the positions in the buffer layer opposite to the active regions, and an ohmic metal layer is formed in the first openings.

A method for forming a semiconductor wafer includes providing a substrate wafer, in which the substrate wafer has a bow value that is non-zero and has a first portion, the first portion has a first surface and a second surface opposite to the first surface, and the first surface is concave. The method further includes performing a first ion implantation process to the substrate wafer, such that the first surface of the first portion has a first implantation region, and the bow value of the substrate wafer is closer to zero after performing the first ion implantation process than before performing the first ion implantation process. The method further includes depositing an epitaxial layer on the substrate wafer after performing the first ion implantation process.

A vertical conduction MOSFET device includes a body of silicon carbide, which has a first type of conductivity and a face. A superficial body region of a second type of conductivity has a first doping level and extends into the body to a first depth, and has a first width. A source region of the first type of conductivity extends into the superficial body region to a second depth, and has a second width. The second depth is smaller than the first depth and the second width is smaller than the first width. A deep body region of the second type of conductivity has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, and the second doping level is higher than the first doping level.