Aspects of the present disclosure provide a sensor for remote temperature measurement. For example, the sensor can include a light source configured to form an illumination beam, focusing optics configured to direct the illumination beam from the light source onto a semiconductor sample at an illuminated spot thereof, for exciting bandgap photoluminescence (PL) light in the semiconductor sample, collection optics configured to collect the bandgap PL light excited from the semiconductor sample, at least one optical detector configured to measure spectral intensities of the bandgap PL light in a vicinity of a semiconductor bandgap wavelength of the semiconductor sample, and transmission optics configured to transmit the bandgap PL light from the collection optics to the at least one optical detector.

A substrate processing method includes: transferring, by a first transfer arm, a wafer lot including a plurality of substrates to a processing bath in which the plurality of substrates in the wafer lot are immersed and processed collectively; receiving, by a second transfer arm, the wafer lot from the first transfer arm, and immersing the wafer lot in an immersion bath in which the plurality of substrates in the wafer lot are immersed collectively; and transferring, by a third transfer arm, the plurality of substrates in the wafer lot to a delivery table one by one. The immersion bath is disposed outside a movement range of the first transfer arm such that the first transfer arm is operated independently from the third transfer arm.

Substrates are immersed in a treatment fluid stored in a treatment chamber, and subjected to a surface treatment. A first lid and a second lid cover an upper opening of the treatment chamber. The first lid and the second lid each include sloped surfaces. At least a part of the first lid and the second lid is immersed in the treatment fluid. During the treatment on the substrates, a plurality of bubble supply pipes eject bubbles into the treatment fluid. The sloped surfaces formed on the first lid and the second lid guide the bubbles reaching an interface between the treatment fluid, the first lid, and the second lid diagonally upward. Thus, the bubbles are smoothly released outside the treatment chamber. This can eliminate retention of the bubbles, avoid contacts between the bubbles and the substrates, and suppress a decrease in the treatment uniformity.

A substrate processing apparatus includes a first substrate processing portion and a transfer mechanism. The first substrate processing portion processes substrates one by one by immersing each of the substrates in a vertical posture in a first processing liquid. The transfer mechanism receives the substrate in a horizontal posture, changes a posture of the substrate from the horizontal posture to the vertical posture, and carries the substrate in the vertical posture into the first substrate processing portion. The first substrate processing portion includes a processing bath and a substrate placement mechanism. The processing bath has a capacity corresponding to a single substrate. In the processing bath, only the single substrate in the vertical posture is disposed and the first processing liquid is stored. The substrate placement mechanism receives the substrate from the transfer mechanism and places only the single substrate in the vertical posture in the first processing liquid.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a moving mechanism. The chamber accommodates a substrate. The substrate holding portion is disposed in the chamber and holds the substrate one by one. The moving mechanism moves the substrate holding portion. The substrate holding portion includes a chuck pin that comes into contact with the substrate. The moving mechanism moves the substrate holding portion within the chamber between at least one processing position at which the substrate is processed with a processing liquid and a cleaning position at which the chuck pin is cleaned.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a turning mechanism. The chamber has an opening through which the inside and the outside communicate with each other and a substrate is carried in and out. The substrate holding portion is disposed in the chamber and holds the substrate one by one. The turning mechanism turns the substrate holding portion to move the substrate holding portion between a plurality of processing positions at which the substrate is processed with the processing liquid in the chamber.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a turning mechanism. The chamber has a first opening through which an inside and an outside communicate with each other and a substrate is carried in, and a second opening through which the inside and the outside communicate with each other and the substrate is carried out. The substrate holding portion is disposed in the chamber and holds the substrates one by one. The turning mechanism turns the substrate holding portion to move the substrate holding portion between a plurality of processing positions at which the substrate is processed with a processing liquid in the chamber.

A substrate processing apparatus includes a substrate holding portion, an immersion bath, a first supplying portion, and a moving mechanism. The substrate holding portion holds and rotates a substrate. The immersion bath stores a processing liquid, accommodates the substrate, and immerses the substrate in the processing liquid. The first supplying portion supplies the processing liquid to the immersion bath. The moving mechanism relatively moves the substrate holding portion and the immersion bath. The moving mechanism switches a state of the substrate between a non-immersion state in which the substrate is located outside the immersion bath and an immersion state in which the substrate is located inside the immersion bath and immersed in the processing liquid by moving the substrate holding portion or the immersion bath.

There is provided a substrate processing apparatus with improved throughput by reconsidering a configuration of an apparatus including a batch type module and a single wafer type module. In a single wafer processing region according to single wafer processing of a processing block of the present invention, a buffer unit to and from which both a first transfer mechanism HTR and a center robot can hand over and receive a substrate(s) is provided. Therefore, the first transfer mechanism can collectively hand over and receive processed substrates and unprocessed substrates via the buffer unit. Therefore, a potential of the first transfer mechanism is drawn out, and the substrate processing apparatus having a high throughput can be provided.

A system is provided. The system includes a semiconductor fabrication station and a rescue system. The semiconductor fabrication station includes a tank to hold a liquid. The semiconductor fabrication station is configured to perform a semiconductor fabrication process on a semiconductor wafer disposed in the tank. The rescue system is configured to monitor a signal line indicative of a state of the semiconductor fabrication station. The rescue system is configured to open a drain valve of the tank to drain the liquid from the tank in response to the signal line indicating a potential fabrication station error.