A method for supplying processing liquid is configured to adjust the supply amount of silica by a processing liquid supply unit in order to improve a selectivity ratio in a substrate treatment process through the processing liquid, to mix processing liquid substances, to adjust the concentration and temperature of the processing liquid on the basis of a substrate processing condition to supply the processing liquid to a substrate processing apparatus, to recover the processing liquid through a processing liquid recycling unit spatially separated from a processing liquid supply unit and to adjust the concentration of moisture and temperature of the processing liquid, and to supply the recycled processing liquid.

An active material separation device according to an embodiment of the present invention is an active material separation device configured to separate an active material from a battery member, which includes a container, a base member disposed in the container and configured to support the battery member, and a nozzle disposed above the container and configured to inject a liquid with respect to the battery member, and the nozzle injects the liquid in a state in which a position of an upper surface of the battery member is lower than a position of a liquid surface of the liquid.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

A substrate treating apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates at a time, a posture turning unit configured to turn and change the orientation of the substrates to be processed by the batch-type processing unit, while the substrates are wetted with deionized water, a first transport unit that transports the substrates, processed by the batch-type processing unit, to the posture turning unit, a second transport unit that transports the substrates turned horizontally by the posture turning unit to enable them to be subjected to treatment with the hand unit and a cleaning and drying unit configured to perform cleaning and drying treatment at the hand unit.

Provided is a substrate processing apparatus that makes it possible to prevent or reduce a problem caused by mixing of a processing liquid for processing a substrate and a processing liquid for cleaning a filter. A substrate processing apparatus (100) includes: a circulation pipe (21) that includes a part branching into two pipes, which are a first branch pipe and a second branch pipe; a filter (53) that filters a first processing liquid and that is provided to at least the first branch pipe; and a controller (73) that carries out a first cleaning process in which a second processing liquid is allowed to flow into the first branch pipe in a backward direction, and then a third processing liquid is allowed to flow into the first branch pipe in the backward direction.

An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

A substrate processing apparatus includes an outer bath, an inner bath in the outer bath, a chemical solution supply pipe in fluid communication with a portion of the outer bath, and an outer gas supply pipe in fluid communication with another portion of the outer bath. The outer bath includes an outer body providing an outer receiving space, and an outer door coupled to the outer body and configured to close the outer receiving space. An end of the outer gas supply pipe is located in the outer receiving space between the outer body and the inner bath, and a portion of the chemical solution supply pipe is located in the inner bath.

Processing unevenness within a substrate surface is further suppressed even in a case where an upward flow rate increases. A substrate processing device includes a controller that controls, on the basis of a flow rate of a processing liquid which is controlled by a second flow rate control mechanism, a first flow rate control mechanism so that a flow rate of gas supplied to a first gas supply pipe is larger than a flow rate of gas supplied to a second gas supply pipe.

Unevenness of speed at which a processing liquid flows in a process tank is eliminated and processing unevenness within a substrate surface is further suppressed. A substrate processing device includes an outer gas bubble generation pipe and an inner gas bubble generation pipe, and a plurality of discharge holes which each of the inner gas bubble generation pipe and the outer gas bubble generation pipe has includes a first discharge hole having a first hole diameter and a second discharge hole having a second hole diameter that is larger than the first hole diameter.

Disclosed is a substrate treating apparatus provided with a posture turning unit. The posture turning unit includes a first vertical holder having a first rotating member and a first holder body provided so as to protrude from the first rotating member. The posture turning unit also includes a second vertical holder having a second rotating member and a second holder body provided so as to protrude from the second rotating member. A rotation driving unit rotates the two holder bodies around the two rotating members, respectively, whereby the two vertical holders are changed into a holding state or a releasing state. When a posture of substrates is turned to horizontal by a support base rotator, the rotation driving unit changes a state of the two vertical holders into the releasing state, whereby the substrates are released from the two holder bodies.