Embodiments disclosed herein include semiconductor devices. In an embodiment, a die comprises a substrate, where the substrate comprises a semiconductor material. In an embodiment a fiducial is on the substrate. In an embodiment, the fiducial is a cantilever beam that extends out past an edge of the substrate.

According to one embodiment, a semiconductor device includes: a first frame; a first chip on the first frame; a second frame spaced apart from the first frame in a first direction; a second chip on the second frame; and a first joint terminal above the second chip. The first frame includes a first terminal portion extending toward the second frame. The first joint terminal includes a second terminal portion extending toward the first frame. The second terminal portion includes first and second projecting portions each of which projects toward the first frame and which are spaced apart from each other in a second direction. An end portion of the first projecting portion and an end portion of the second projecting portion are each joined on the first terminal portion.

Reliability of a semiconductor device is improved. The semiconductor device includes a clip which is electrically connected to a main-transistor source pad via a first silver paste and is connected to a lead via a second silver paste. The clip has a first part with which the first silver paste is in contact, a second part with which the second silver paste is in contact, and a third part positioned between the first part and the second part. A protruding member is formed on a surface of the main-transistor source pad, and the first part is in contact with the protruding member.

A discrete power semiconductor package includes a semiconductor chip, a heatsink, a first lead, a second lead, and a clip. The heatsink is adjacent the semiconductor chip and draws heat away from the semiconductor chip. The clip binds the semiconductor chip to the heatsink and includes a chip linker, a first terminal, and a second terminal. The chip linker is atop the semiconductor chip. The first terminal connects to the first lead and the second terminal connects to the second lead.

Semiconductor device packages including leads for enhanced video bandwidth and related operating criteria are described. An example package includes a flange having a top surface, a frame secured to the flange, and a pair of output leads. The frame forms an air cavity bounded in part by the top surface of the flange. The pair of output leads extend from outside the frame, through at least a portion of the frame, and to within the air cavity. The package also includes a decoupling lead positioned between the pair of output leads. The package also includes a second decoupling lead positioned between the pair of output leads in some examples. The decoupling lead or leads between the output leads facilitate the use of off-package decoupling capacitors to meet video bandwidth and other operating specifications. The package can also include one or more additional decoupling leads between input leads.

A transistor package includes a semiconductor transistor chip having opposite first and second surfaces, one or a plurality of first load electrodes, one or a plurality of second load electrodes, and a control electrode on the first surface. A leadframe faces the first surface of the semiconductor transistor chip and includes a first terminal, a second terminal, and a control terminal of the package which are exposed at a bottom of the package. The first terminal is electrically coupled to the first load electrode(s). The second terminal is electrically coupled to the second load electrode(s). The control terminal is electrically coupled to the control electrode. The first terminal is aligned with a first side of the package. The second terminal is aligned with a second side opposite the first side. The control terminal is aligned with a third side of the package which connects between the first and second sides.

This invention provides opportunity for diamond and bi-wafer microstructures to be implemented in advanced ICs and advanced IC packages to form a new breed of ICs and SiPs that go beyond the limitations of silicon at the forefront of IC advancement due primarily to diamond's extreme heat dissipating ability. Establishing the diamond and bi-wafer microstructure capabilities and implementing them in advanced ICs and advanced IC packages gives IC and package architects and designers an extra degree of design freedom in achieving extreme IC performance, particularly when thermal management presents a challenge. Diamond's extreme heat spreading ability can be used to dissipate hotspots in processors and other high-power chips such as GaN HEMT, resulting in performance and reliability enhancement for IC and package applications covering HPC, AI, photonics, 5G RF/mmWave, power and IoT, and at the system level propelling the migration from traditional computing to near-memory computing and in-memory computing.

Performance of a semiconductor device is enhanced. A loss of a circuit device using a semiconductor device as a switch is reduced. A semiconductor device includes: a first semiconductor chip having a first MOSFET of p-type and a first parasitic diode; and a second semiconductor chip having a second MOSFET of n-type and a second parasitic diode. On front surfaces of the first and second semiconductor chips, a first source electrode and a first gate wiring and a second source electrode and a second gate wiring are formed, respectively. On back surfaces of the first and second semiconductor chips, first and second drain electrodes are formed, respectively. The second back surface and the first front surface face each other such that the second drain electrode and the first source electrode come into contact with each other via a conductive paste.

A power electronics module, having a PCB having power semiconductors arranged on connecting regions of an uppermost layer of said PCB, wherein the PCB has a preset dimension to arrange a preset maximum number of power semiconductors thereon. A lead frame arranged above the power semiconductors provides three-dimensional power and control routing, and includes a drain-source connection to connect to a drain-source contact of the PCB, and a load-source connection opposite the drain-source connection via the power semiconductors that is formed from a plurality of subregions, each of which can be brought into electrical contact with the power semiconductors, and a gate- and kelvin-source terminal, which are arranged above the load-source connection and have been brought into electrical contact with the power semiconductors. At least one dummy chip consisting of an electrically nonconductive material is arranged on each of the connecting regions that are not populated by power semiconductors.

A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.