A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A semiconductor device includes: a first lead including a base portion; a semiconductor element mounted on a first side of the base portion in the thickness direction and including a first electrode; a second lead spaced apart from the base portion in a first direction perpendicular to the thickness direction; a first conductive member electrically bonded to the first electrode and the second lead; and a sealing resin. The first conductive member includes a first portion bonded to the first electrode via a conductive first bonding layer. The first portion includes a first surface and a second surface respectively facing the first side and a second side in the thickness direction. The first portion includes a plurality of first recesses that are recessed from the first surface and a plurality of second recesses that are recessed from the second surface.

Workability in a manufacturing process of a semiconductor device is improved. A terminal member is the terminal member joined to an electrode of a semiconductor element, and includes a conductor portion, a first annular projecting portion, and an annular recess. The conductor portion has a first main surface and a second main surface located on a side opposite to the first main surface. The first annular projecting portion is provided on the first main surface of the conductor portion. The annular recess is provided on the second main surface and is disposed at a position overlapping with the first annular projecting portion. By pressing a joining member against the first main surface of the terminal member, the first annular projecting portion can be embedded in the joining member.

A semiconductor device, including: a semiconductor chip including an electrode on an upper surface thereof; and a wiring member including a bonding portion, a rising portion, and a connecting portion, the bonding portion being bonded to the electrode via a bonding material, the rising portion being of a shape of a flat plate and extending upward from the bonding portion, the connecting portion connecting the bonding portion to the rising portion. The rising portion includes a lower region connected to the connecting portion and an upper region located above the lower region. Both the lower region and the connecting portion have a first thickness, and the upper region has a second thickness that is larger than the first thickness.

A semiconductor assembly includes a top substrate and a base substrate attached to top and bottom electrode layers of a semiconductor device, respectively. The top substrate includes an electrode connection plate thermally conductible with and electrically connected to the top electrode layer of the semiconductor device and vertical posts protruding from the electrode connection plate and electrically connected to the base substrate. The base substrate includes an electrode connection slug embedded in a dielectric layer and thermally conductible with and electrically connected to the bottom electrode layer of the semiconductor device and first and second routing circuitries deposited on two opposite surfaces of the dielectric layer, respectively, and electrically connected to each other.

According to one embodiment, a semiconductor apparatus includes: a wiring board having a first through-hole; a first substrate including a first conductive layer, a first insulating layer on the first conductive layer, and a second conductive layer on the first insulating layer, the first substrate being provided in the first through-hole; a first semiconductor chip provided on the first substrate in the first through-hole; and a sealing member that covers the first substrate and the first semiconductor chip in the first through-hole, wherein a first dimension of the first insulating layer in a first direction parallel to a surface of the first substrate is larger than a second dimension of the first conductive layer in the first direction and a third dimension of the second conductive layer in the first direction.

In one example, an electronic device include a substrate with a die paddle and a contact. An electronic component is coupled to the die paddle. A conductive connect includes a foot portion coupled to the contact and a connect plate portion coupled to the electronic component. The foot portion includes a top side, a bottom side, and an outward lateral side. A chamfer extends inward from the outward lateral side and extends to the bottom side. A conductive adhesive couples the foot portions to contact and covers the chamfer and the bottom side. An encapsulant covers the electronic component, the conductive connect, and at least portions of the substrate. The chamfer improves the bonding integrity between the conductive connect and the substrate. Other examples and related methods are also disclosed herein.

A semiconductor device includes a semiconductor chip having a first chip surface and a second chip surface, and a connector member having a bonding portion that faces the first chip surface and a connection portion. The connection portion is connected to an end portion of the bonding portion on one side in a second direction, and located on the other side in a first direction toward one side in the second direction. The bonding portion has a first bonding surface bonded to the first chip surface. A first recessed portion that is recessed on one side in the first direction and is open to the other side in the second direction is provided in the first bonding surface. A dimension of the first recessed portion in the second direction is 40% or more and 60% or less of a dimension of the bonding portion in the second direction.

A semiconductor device includes a first conductive portion, a second conductive portion, a first semiconductor element, a second semiconductor element, two first terminals, a second terminal, a third terminal, a first conductive member, a second conductive member, a plurality of first control terminals, a plurality of second control terminals, and a sealing resin. In a first direction orthogonal to the thickness direction, the first conductive portion and the second conductive portion are spaced apart from each other. The second terminal and the second conductive member form a conduction path located outside the plurality of first control terminals in a second direction orthogonal to the thickness direction and the first direction.

A semiconductor device includes a semiconductor element having a first electrode and a second electrode, a first conductive member being located on a first side in a thickness direction with respect to the first electrode and having a first reverse surface to face a second side in the thickness direction, a second conductive member being located on the first side in the thickness direction with respect to the second electrode and having a second reverse surface to face the second side in the thickness direction, a first conductive bonding material interposed between the first electrode and the first reverse surface and bonded to the first electrode and the first conductive member, and a second conductive bonding material interposed between the second electrode and the second reverse surface and bonded to the second electrode and the second conductive member. An area of the second reverse surface is smaller than an area of the first reverse surface. A distance between the second electrode and the second reverse surface in the thickness direction is smaller than a distance between the first electrode and the first reverse surface in the thickness direction.