A semiconductor die stack includes a first semiconductor die having a first lattice direction, and a second semiconductor die bonded to the first semiconductor die and having a second lattice direction different than the first lattice direction.

Stacked die modules for semiconductor device assemblies and methods of manufacturing the modules are disclosed. In some embodiments, the module includes a shingled stack of semiconductor dies, each die having an uncovered porch with bond pads. Further, a dielectric structure partially encapsulates the shingled stack of semiconductor dies. The dielectric structure includes openings corresponding to the bond pads. The module also includes conductive structures disposed on the dielectric structure, where each of the conductive structures extends over at least one porch of the semiconductor dies to connect to at least one bond pad through a corresponding opening. The semiconductor device assembly may include a controller die attached to a package substrate, the controller die carrying one or more stacked die modules, and bonding wires connecting terminals of the modules to package bond pads.

In a semiconductor device, a first wiring member is electrically connected to a first main electrode on a first surface of a semiconductor element, and a second wiring member is electrically connected to a second main electrode on a second surface of the semiconductor element. An encapsulating body encapsulates at least a part of each of the first and second wiring members, the semiconductor element and a bonding wire. The semiconductor element has a protective film on the first surface of the semiconductor substrate, and the pad has an exposed surface exposed from an opening of the protective film. The exposed surface includes a connection area to which the bonding wire is connected, and a peripheral area on a periphery of the connection area. The peripheral area has a surface that defines an angle of 90 degrees or less relative to a surface of the connection area.

Provided is a semiconductor package with improvement in warpage thereof and a method of fabricating the semiconductor package. The semiconductor package includes a first semiconductor chip, a redistribution substrate on the first semiconductor chip, a second semiconductor chip on the redistribution substrate, a first encapsulant encapsulating the second semiconductor chip, on the redistribution substrate, a metal post arranged on a top surface of the first semiconductor chip, and a second encapsulant covering side surfaces of the metal post, on the bottom surface of the first semiconductor chip.

A system-in-package includes an interposer substrate having a first side and a second side opposite the first side, and a redistribution layer disposed on the first side. The redistribution layer includes a plurality of contact pads and a plurality of interconnections disposed on the first side. The plurality of interconnections is electrically connected to a plurality of terminals disposed on the second side opposite the first side. A first semiconductor die is disposed on the first side and electrically coupled to a first of the plurality of contact pads and a first of the plurality of interconnections disposed on the first side of the interposer substrate. A second semiconductor die is disposed on the first side. The second semiconductor die is electrically coupled to a second of the plurality of contact pads and a second of the plurality of interconnections disposed on the first side of the interposer substrate.

A package comprising a first metallization portion; a second metallization portion; a first passive device coupled to the second metallization portion; a first encapsulation layer located between the first metallization portion and the second metallization portion; a first integrated device coupled to the first metallization portion; a second integrated device coupled to the first metallization portion; a dummy silicon structure located laterally between the first integrated device and the second integrated device; and a second encapsulation layer coupled to the first metallization portion, wherein the second encapsulation layer at least partially encapsulates the first integrated device, the second integrated device and the dummy silicon structure.

In the various aspects, a wafer protection/coating material is provided with luminescent additives and is deposited over a BGA or a plurality of solder bumps as a protective layer during a laser scribe, a laser full cut, and/or plasma singulation process. The inclusion of luminescent additives facilitates assessing, in-line, the coating quality, i.e., thickness, specifically the coverage of the wafer protection material on top of the solder bumps using luminescent detection metrology. In an aspect, the wafer protection material may be water-soluble and may be removed after the laser/plasma process step using water.

Analyte sensor devices and methods for fabricating analyte sensor devices are presented here. In accordance with certain embodiments, a device for detecting and/or measuring one or more analytes in fluid includes a substrate and one or more analyte sensors disposed on and/or in the substrate. Further, the device includes an integrated circuit disposed on and/or in the substrate. The integrated circuit is electrically integrated with the analyte sensors.

An example apparatus includes: conductive stud bumps on a device side surface of a multilayer circuit substrate arranged to mount a passive component; at least one semiconductor die flip-chip mounted to the device side surface of the multilayer circuit substrate, the at least one semiconductor die having bond pads coupled to conductors in the multilayer circuit substrate; mold compound deposited over the device side surface of the multilayer circuit substrate, the mold compound covering a portion of the semiconductor die and having a trench extending into the mold compound that exposes the conductive stud bumps; and a passive component mounted to the conductive stud bumps, the passive component having terminals that extend into the trenches in the mold compound and contact a surface of the conductive stud bumps.

Disclosed are semiconductor packages. A semiconductor package may include a substrate with a ball grid array (BGA) on a lower surface thereof. The semiconductor package may also comprise a die on an upper surface of the substrate, and a land-side component (LSC) on the lower surface of the substrate. One or more edge terminals may be formed on one or more edges of the LSC. At least one edge terminal may comprise an edge insulator and an edge conductor. The edge terminals allows a substantial reduction in the keep-out-zone. As a result, more BGA balls may be provided.