An electronic package and a manufacturing method thereof are provided, in which a bridge chip is disposed on one side of a wiring structure, and an electronic component and an optical engine are disposed on the other side of the wiring structure. The bridge chip, the electronic component and the optical engine are electrically connected to the wiring structure, so that the electronic component and the optical engine can be electrically connected to each other via the bridge chip, such that the path of electrical transmission is shortened and the loss and power consumption of data transmission are reduced.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiO.sub.xN.sub.y surface on the dielectric sidewall of the inorganic dielectric plateau. The SiO.sub.xN.sub.y surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.

A semiconductor package includes: a first semiconductor chip; a second semiconductor chip above the first semiconductor chip; a shielding wall structure surrounding the first semiconductor chip at a side of the first semiconductor chip; a shielding film structure extending along a side surface of the second semiconductor chip and an upper surface of the second semiconductor chip; a first chip bonding pad between the first semiconductor chip and the second semiconductor chip and adjacent to an upper portion of the first semiconductor chip; and a second chip bonding pad between the first semiconductor chip and the second semiconductor chip and adjacent to a lower portion of the second semiconductor chip.

The present disclosure provides a chipset and a manufacturing method thereof. The chipset includes a logic chip, an input/output chip, and an interposer. The logic chip includes a plurality of first bonding components disposed in the first device layer. The input/output chip includes a plurality of second bonding components disposed in the second device layer. The interposer includes a plurality of third bonding components disposed in the third device layer. The logic chip is directly bonded to the first portion of the plurality of third bonding components of the interposer in a pad-to-pad manner through the first portion of the plurality of first bonding components, and the input/output chip is directly bonded to the second portion of the plurality of third bonding components of the interposer in a pad-to-pad manner through the plurality of second bonding components.

A semiconductor package may include a base chip, a semiconductor chip stack including a plurality of semiconductor chips sequentially stacked on the base chip, a plurality of connection bumps below the base chip, and an encapsulant covering a side surface of the first semiconductor chip and side surfaces of each of the plurality of second semiconductor chips on the base chip, wherein, on at least one side of the semiconductor chip stack, the encapsulant includes a portion in which a width thereof in a horizontal direction increases as the encapsulant being away from the base chip in a vertical direction.

A semiconductor encapsulation method, comprising: forming a protection layer on a front side of a chip to be encapsulated; arranging said chip, with the protection layer being formed on the front side thereof, on a carrier plate, wherein the front side of said chip faces upwards and a back side thereof faces the carrier plate; and encapsulating, on the carrier plate, said chip and the protection layer to form a plastic encapsulation layer. Further provided is a semiconductor encapsulation structure.

A semiconductor package includes a base structure; a semiconductor chip stack stacked on the base structure in a vertical direction and electrically connected to the base structure, and including a plurality of semiconductor chips wherein the plurality of semiconductor chips include a lowermost semiconductor chip; a dummy chip on the semiconductor chip stack; a joint film between the dummy chip and the semiconductor chip stack; a plurality of joint patterns spaced apart from the plurality of semiconductor chips on the base structure; and an encapsulant wherein the lower pads of the semiconductor chips stacked on the lowermost semiconductor chip among the plurality of semiconductor chips are in contact with the upper pads of the semiconductor chips respectively disposed therebelow.

A fan-out type semiconductor package is provided and may include: a package substrate; an interposer on an upper surface of the package substrate, the interposer including upper pads and lower pads electrically connected with the upper pads; conductive bumps between the package substrate and the lower pads of the interposer and electrically connecting the package substrate with the interposer; a semiconductor chip on a central portion of an upper surface of the interposer and electrically connected with the upper pads of the interposer; a molding member on an edge portion of the upper surface of the interposer, the molding member including an upper surface coplanar with an upper surface of the semiconductor chip; and a metal pillar structure vertically extending from the upper surface of the molding member to a lower surface of the interposer and configured to individually make contact with the lower pads of the interposer.

A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the semiconductor package via the thermal conductive bonding layer. The lid has a first cavity and a second cavity connected to the first cavity. The semiconductor package is located in the first cavity, and the thermal conductive bonding layer is partially disposed in the second cavity. The second cavity has a first portion and a second portion joined with the first portion and narrower than the first portion, the second portion is located between the first portion and the first cavity, and the thermal conductive bonding layer is formed in the second portion. A method for manufacturing a semiconductor device is also provided.