An electronic package is provided, where a laterally diffused metal oxide semiconductor (LDMOS) type electronic structure is mounted onto a complementary metal oxide semiconductor (CMOS) type electronic element to be integrated into a chip module, thereby shortening electrical transmission path between the electronic structure and the electronic element so as to reduce the communication time between the electronic structure and the electronic element.

Provided is a semiconductor device in which a bonding state between a bonding object and a terminal is improved. The semiconductor device includes a bonding object, a case, and a terminal. The bonding object includes a metal pattern. The case includes a frame body and accommodates the bonding object inside the frame body. The terminal includes a first end and a second end. The first end is bonded to the metal pattern of the bonding object. The second end is led out of the case from the first end. The bonding object is an insulating substrate or a semiconductor element held on an insulating substrate. The case includes a beam bridging across a space inside frame body. The beam holds a portion of the terminal between the first end and the second end.

Various aspects of the present disclosure generally relate to an integrated circuit device, such as a packaged integrated circuit device. In some aspects, an integrated circuit device includes a semiconductor die and a lid thermally coupled to the semiconductor die. The lid includes a two-phase thermal management device. The integrated circuit device also includes an interface layer in contact with the semiconductor die and the lid.

A semiconductor package includes a redistribution substrate, a chip stack structure disposed on the redistribution substrate and including a plurality of semiconductor chips disposed in a stack, a vertical wiring portion connecting the chip stack structure to the redistribution substrate and including a plurality of vertical wires that extend in a direction perpendicular to an upper surface of the redistribution substrate, a sealing member configured to seal at least a portion the chip stack structure and the vertical wiring portion, and a heat dissipation metal member disposed on side surfaces and an upper surface of the sealing member.

A microelectronic device includes a control logic structure including a high-power component. The microelectronic device also includes a memory array structure vertically offset from and attached to the control logic structure, the memory array structure comprising an array of memory cells. The microelectronic device further includes a heat sink structure vertically underlying and horizontally overlapping the high-power component, the heat sink structure comprising a material having higher thermal conductivity than semiconductor material of the control logic structure.

An electronic device includes a first semiconductor component, a second semiconductor component, an encapsulation layer, and a circuit layer. The encapsulation layer has a first side, and the encapsulation layer surrounds the first semiconductor component and the second semiconductor component. The circuit layer is disposed on the first side of the encapsulation layer. The encapsulation layer has a first thickness, and the first semiconductor component has a second thickness. The first thickness is greater than the second thickness. A difference between the first thickness and the second thickness is greater than half of the first thickness and less than three times the second thickness. In a top view, the encapsulation layer has a first area, the first semiconductor component has a second area, the second semiconductor component has a third area, and a sum of the second area and the third area is greater than half of the first area.

The present disclosure provides a packaging device and a method to form the packaging device. The packaging device includes a package base, a die structure disposed over the package base, and a package lid over the die structure. The package lid is thermally coupled with the die structure and the package base.

A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.

A heat conduction sheet includes a heat conduction layer containing at least one kind of graphite particles (A) selected from the group consisting of scale-like particles, ellipsoidal particles and rod-like particles, wherein in a case of scale-like particles, a plane direction of the particle is oriented in a thickness direction of the heat conduction sheet, and in a case of ellipsoidal particles or rod-like particles, a long axis direction of the particle is oriented in the thickness direction of the heat conduction sheet, and the heat conduction sheet contains a metal component having a melting point of 200 C. or less.

The present disclosure relates to a semiconductor package. An embodiment of the present disclosure provides a semiconductor package including: a package substrate; a semiconductor chip positioned on a first surface of the package substrate; a pad positioned on a second surface of the package substrate; a solder resist layer including an opening positioned on the second surface of the package substrate and the pad, the solder resist layer vertically overlapping at least a portion of the pad, the solder resist layer including a dummy opening spaced apart from the opening; and a filling layer positioned within the dummy opening, wherein the dummy opening is positioned farther than the opening from a center of the package substrate in a plan view.