A highly conductive and heat-dissipating chip and a manufacturing method thereof are provided. The manufacturing method includes: providing a substrate having a first surface and a second surface that is opposite to the first surface; forming a groove having at least one arc shape on the substrate; and filling a heat-dissipating material into the groove. Accordingly, a heat dissipation effect of the substrate can be enhanced, a structure of the substrate can be protected, and a service life of the substrate can be prolonged.

Disclosed are power modules with vertically-oriented power dies. A power die includes a power transistor. A plane of the power die is oriented vertically relative to a plane of a motherboard or other substrate. An inductor is disposed on a top end of the power module or between two power dies in the power module.

A transistor includes a substrate having a first surface and a second surface that are opposite to each other. An active layer is disposed on a side of the first surface, and a metal layer is disposed on a side of the second surface. A hole penetrates the substrate and at least a part of the active layer, where in a direction from the substrate to the active layer, the hole includes a first hole segment and a second hole segment, a joint between the first hole segment and the second hole segment has a connection interface, and a hole diameter of the first hole segment is greater than a hole diameter of the second hole segment. A conducting layer is formed on a wall surface of each of the first hole segment and the second hole segment, and the conducting layer is electrically connected to the metal layer.

In one example, an electronic device, comprises a substrate comprising a dielectric structure and a conductive structure, an electronic component over a top side of the substrate, wherein the electronic component is coupled with the conductive structure; an encapsulant over the top side of the substrate and contacting a lateral side of the electronic component, wherein the encapsulant comprises a first trench on a top side of the encapsulant adjacent to the electronic component, a lid over the top side of the encapsulant and covering the electronic component; and an interface material between the top side of the encapsulant and the lid, and in the first trench. Other examples and related methods are also disclosed herein.

A multilayer composite thermally-conductive sheet, a preparation method therefor and use thereof are provided. The multilayer composite thermally-conductive sheet includes a metal foil, two transition layers provided on two opposite side surfaces of the metal foil, and two low-temperature alloy layers respectively provided on surfaces of the transition layers facing away from the metal foil, wherein the metal foil is made from at least one of silver, copper, zinc, and platinum, the transition layers are made from either indium or tin, the transition layers have a thickness of 5-13 m; and a melting point of the low-temperature alloy layers is 30-300 C.

A package substrate according to the present disclosure includes a package substrate, a package component bonded to the package substrate and including a plurality of dies, a lid disposed over the package component and the package substrate, and a thermal interface material (TIM) layer sandwiched between the package component and the lid. The lid includes a plurality of heat spreader patterns that extend from a bottom surface of the lid into the TIM layer.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

A cooling device includes a tungsten alloy cooling pad (10), a first substrate (20), a second substrate (30) and multiple connecting columns (40). The tungsten alloy cooling pad (10) is used for being attached on the heat source (H). The first substrate (20) is parallelly superposed on the tungsten alloy cooling pad (10). The second substrate (30) corresponds to the first substrate (20) to be parallelly arranged. Each connecting column (40) is perpendicularly connected between the first substrate (20) and the second substrate (30). Each connecting column (40) is arranged in a matrix. Accordingly, the tungsten alloy cooling pad (10) can rapidly disperse and transfer the heat of the heat source (H) to the first substrate (20) and transfer to the second substrate (30) through each connecting column (40) for cooling to avoid heat accumulation leading to overheat.

A semiconductor package including a lid having one or more heat pipes located on and/or within the lid to provide improved thermal management. A lid for a semiconductor package having one or more heat pipes thermally integrated with the lid may provide more uniform heat loss from the semiconductor package, reduce the risk of damage to the package due to excessive heat accumulation, and may enable the lid to be fabricated using less expensive materials, thereby reducing the costs of a semiconductor package.

In a method for producing a semiconductor module, a heatsink is produced from a first metal material and a cavity with a base surface and a wall portion is introduced in a heatsink surface such as to form an obtuse angle between the base surface and the wall portion. In addition, a depression is introduced into the base surface of the cavity which depression is smaller than the base surface of the cavity. A second metal material is applied in the cavity and the depression using a thermal spraying method to form a heat-spreading layer of different thicknesses, with the second metal material having a thermal conductivity which is higher than a thermal conductivity of the first metal material. A semiconductor arrangement is connected to the heat-spreading layer.