A heat-transfer component defines a thermal-interface surface and has a composite thermal-interface material bonded to the thermal-interface surface. The composite thermal-interface material comprises a particulate filler material dispersed within a metallic carrier material. With a thermal-interface material bonded to the thermal-interface surface, the thermal-contact resistance between the thermal-interface material and the heat-transfer component can be reduced compared to conventional thermal-interface materials, including conventional metallic thermal-interface materials. The particulate filler material can have a higher bulk thermal conductivity than the metallic carrier material and can be wetted by the metallic carrier material, providing a bulk thermal conductivity of the composite thermal-interface material that is higher than that of the carrier material without the particulate filler material. Such materials can relieve thermally induced mechanical stresses across an interface between materials having different coefficients of thermal expansion. Some electrical devices include a heat generating component cooled by such a heat-transfer component.

A semiconductor package may include a redistribution structure, a semiconductor chip on a surface of the redistribution structure, a UBM pad on an opposite surface of the redistribution structure, a barrier pattern on at least a portion of a lower surface of the UBM pad and surrounding a side surface of the UBM pad, and a connection bump on the lower surface of the UBM pad.

An example semiconductor package includes a substrate, a semiconductor chip on the substrate, a heat-dissipation structure on the substrate, heat transfer paste, and a molding layer covering the heat transfer paste. The heat-dissipation structure is horizontally apart from the semiconductor chip. The heat transfer paste is between the semiconductor chip and the heat-dissipation structure. A top surface of the heat transfer paste is at a lower vertical level than a top surface of the heat-dissipation structure.

A packaged chip and a method for manufacturing the packaged chip are provided. The packaged chip includes a substrate, a chip, and a heat sink. The heat sink includes a first bracket, a second bracket, and a cover. The first bracket and the second bracket are disposed on the substrate. The cover is supported on the substrate by the first bracket and the second bracket. The first bracket is a sealed annular bracket. The first bracket and the cover encircle a first space. The chip is accommodated in the first space. A thermal interface material is disposed between the chip and the cover. A hole connected to the first space is provided on the cover. The hole and the first space are filled with a filling material. The second bracket is located outside the first space.

The present invention discloses an elastic heat spreader for chip packaging, a packaging structure and a packaging method. The heat spreader includes a top cover plate and a side cover plate that extends outward along an edge of the top cover plate, wherein the top cover plate is configured to be placed on a chip, and at least a partial region of the side cover plate is an elastic member; and the elastic member at least enables the side cover plate to be telescopic in a direction perpendicular to the top cover plate. According to the present invention, a following problem is solved: delamination between the heat spreader and a substrate as well as the chip due to stress generated by different thermal expansion coefficients of the substrate, the heat spreader and the chip in a packaging process of a large-size product.

A temperature regulation unit (10) includes a plurality of stacked porous metal structures (for example, metal fiber structures (40, 42)) each of which has a plurality of rod-shaped members (32, 34) extending parallel to each other so as to be spaced apart from each other and a connection member (24, 26) connecting the respective rod-shaped members (32, 34) and is formed from metal, the respective rod-shaped members (32, 34) of the respective porous metal structures extend parallel to each other, and a flow passage (50) for a fluid is formed in a gap between the respective rod-shaped members (32, 34).

A heat sink includes a channel including a gyroid structure portion having a non-uniform thickness.

A metal according to the present invention comprises Ga and Bi, wherein the metal includes a liquid metal or a liquid metal and a solid metal at 35 C. The metal according to the present invention may comprise Bi in an amount of 0.01 mass % or more and 30 mass % or less. The metal according to the present invention may further comprise any one or more of In, Sn, Zn, and Ag.

Provided is a semiconductor package including a package substrate, a first semiconductor device arranged on the package substrate, a second semiconductor device arranged on the first semiconductor device, a heat dissipation structure arranged on the second semiconductor device, and at least one first chip stack including a plurality of first core chips apart from the first semiconductor device in a lateral direction and sequentially stacked on the package substrate and a first buffer chip arranged on the second semiconductor device and the plurality of first core chips, wherein the heat dissipation structure is arranged apart from the first buffer chip in the lateral direction, and the plurality of first core chips include a plurality of first core through electrodes configured to penetrate at least a portion of each of the plurality of first core chips.

A two-part curable composition which cures to form a thermally conductive cured product, including: (a) a first part including: (1) at least one metal catalytic component for catalyzing the cure reaction; (2) a non-reactive diluent component; (3) a wetting agent component; (4) a filler component; (5) a rheology modifier component; and (6) a pigment component; and (b) a second part including: (1) at least one silane terminated polyurethane polymer; (2) a moisture scavenger; (3) a non-reactive diluent component; (4) a filler component; and (5) a wetting agent component, wherein at least one of the filler components of the first-part and the second-part comprises a thermally conductive filler.