In a semiconductor device, a first wiring member is electrically connected to a first main electrode on a first surface of a semiconductor element, and a second wiring member is electrically connected to a second main electrode on a second surface of the semiconductor element. An encapsulating body encapsulates at least a part of each of the first and second wiring members, the semiconductor element and a bonding wire. The semiconductor element has a protective film on the first surface of the semiconductor substrate, and the pad has an exposed surface exposed from an opening of the protective film. The exposed surface includes a connection area to which the bonding wire is connected, and a peripheral area on a periphery of the connection area. The peripheral area has a surface that defines an angle of 90 degrees or less relative to a surface of the connection area.

A semiconductor device includes a first semiconductor die, a second semiconductor die bonded to the first semiconductor die, a sealing layer, and an encapsulant disposed on the first semiconductor die and laterally covering the sealing layer and the second semiconductor die. The second semiconductor die is bent with an edge of the second semiconductor die curving upwardly, where a non-bond area is at a periphery of a bonding interface of the first and second semiconductor dies. The sealing layer seals the non-bond area of the first and second semiconductor dies.

A semiconductor die and an electrically conductive ribbon are arranged on a substrate. The electrically conductive ribbon includes a roughened surface. An insulating encapsulation is molded onto the semiconductor die and the electrically conductive ribbon. The roughened surface of the electrically conductive ribbon provides a roughened coupling interface to the insulating encapsulation.

A region of a sealing part is effectively utilized. A semiconductor device includes a semiconductor element, a substrate, a sealing part, and a cavity region. The substrate included in this semiconductor device is disposed adjacent to a bottom surface of the semiconductor element. The sealing part included in this semiconductor device is formed in a shape that covers an upper surface that is a surface facing the bottom surface of the semiconductor element, and seals the semiconductor element. The cavity region included in this semiconductor device is a region disposed in the sealing part and formed with a cavity.

According to one embodiment, a semiconductor apparatus includes: a wiring board having a first through-hole; a first substrate including a first conductive layer, a first insulating layer on the first conductive layer, and a second conductive layer on the first insulating layer, the first substrate being provided in the first through-hole; a first semiconductor chip provided on the first substrate in the first through-hole; and a sealing member that covers the first substrate and the first semiconductor chip in the first through-hole, wherein a first dimension of the first insulating layer in a first direction parallel to a surface of the first substrate is larger than a second dimension of the first conductive layer in the first direction and a third dimension of the second conductive layer in the first direction.

A semiconductor package includes; a package substrate, an interposer disposed on the package substrate, semiconductor chips mounted on the interposer, a molding member on the interposer and surrounding the semiconductor chips, a first sealing member on the molding member, and a heat dissipation member on the package substrate and covering the interposer, the semiconductor chips, and the first sealing member, wherein the heat dissipation member includes a lower structure contacting an upper surface of the package substrate, and an upper structure on the lower structure, extending over the first sealing member, and including a microchannel and a micropillar on the microchannel.

The present invention is an IC module including: a substrate having a through hole; a contact terminal provided on a first surface of the substrate; an IC chip provided on a second surface of the substrate; a holding portion fixed to the substrate and projecting from the substrate; and a fingerprint sensor fixed to the holding portion, wherein the contact terminal is electrically connected to the IC chip via the through hole, and the fingerprint sensor is electrically connected to the IC chip via the holding portion.

A semiconductor device includes a semiconductor element, a first wiring member, a second wiring member, and a terminal. The semiconductor element includes a first main electrode and a second main electrode on a side opposite from the first main electrode. The first wiring member is connected to the first main electrode. The terminal has a first terminal surface connected to the second main electrode and a second terminal surface. The second terminal has four sides. Two of the four sides are parallel to a first direction intersecting the thickness direction, and other two sides of the four sides are parallel to a second direction perpendicular to the thickness direction and the first direction. The second wiring member is connected to the second terminal surface of the terminal through solder, and has a groove. The groove overlaps one or two of the four sides of the second terminal surface.

A semiconductor package may include a buffer die including a plurality of first wire bonding pads, a first group of core dies sequentially stacked on the buffer die, a first interposer on the first group of core dies and including a plurality of first lower connection pads in a lower surface of the first interposer to face the plurality of first wire bonding pads, respectively, a plurality of first conductive wires extending vertically from the plurality of first wire bonding pads between the buffer die and the first interposer, the plurality of first conductive wires being connected to the plurality of first lower connection pads, respectively, and a second group of core dies sequentially stacked on the first interposer.

A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; and an external connection terminal electrically connected to the semiconductor chip and including an inner-side conductor layer, an outer-side conductor layer provided at a circumference of the inner-side conductor layer, and an insulating layer interposed between the inner-side conductor layer and the outer-side conductor layer.