According to one embodiment, a semiconductor integrated circuit having a first inductive element and a second inductive element is provided. The first inductive element is provided in a first signal line. The second inductive element is provided in a loop arranged apart from the first signal line. The second inductive element is magnetically coupled to the first inductive element. The first signal line has signal terminals arranged at both ends. The loop is configured to be devoid of a signal terminal.

A multi-chip module, a packaged module and a wireless device are provided. The multi-chip module comprises a plurality of layers including a first layer, a second layer and a third layer, said second layer positioned between the first layer and third layer; a low noise amplifier circuit distributed across the plurality of layers and including a first inductor in the first layer, a second inductor in the third layer, and a transistor; a common ground plane spanning over at least a portion of the second layer; and a dielectric opening through the common ground plane, said dielectric opening located between the first inductor and the second inductor. The dielectric opening alters a mutual inductance in the low noise amplifier circuit, resulting in an improved input impedance of the low noise amplifier circuit for better input matching.

The present disclosure provides an electronic device. The electronic device includes an electronic component and an antenna component. The antenna component is disposed over the electronic component and defines a cavity configured to accommodating a component to adjust an impedance matching between the electronic component and the antenna component.

A device includes a Doherty amplifier having a first amplifier die having a first output terminal, and a second amplifier die with a second output terminal. A device may include an output impedance matching network connected to an output terminal of the Doherty amplifier. A device may include an impedance inversion element connected to the second output terminal of the second amplifier die. A device may include a first wirebond array connected between the first output terminal of the first amplifier die and the output impedance matching network. A device may include a second wirebond array connected between the first output terminal of the first amplifier die and the impedance inversion element, wherein wirebonds of the first wirebond array are interleaved with wirebonds of the second wirebond array.

A Doherty amplifier according to the present disclosure includes an input terminal, an output terminal, a carrier amplifier connected between the input terminal and the output terminal, a peak amplifier connected in parallel to the carrier amplifier between the input terminal and the output terminal, a first input matching circuit connected between the input terminal and the carrier amplifier and a second input matching circuit connected between the input terminal and the peak amplifier, wherein the carrier amplifier and the peak amplifier output signals toward outside in directions opposite to each other.

A high-frequency module includes a first module substrate including first and second major surfaces, and a second module substrate including third and fourth major surfaces. The first major surface (faces the second major surface. Electronic components are disposed between the second and third major surfaces, on the first major surface, and on the fourth major surface. External connection terminals are disposed on the fourth major surface. A recess is formed in the first major surface. The electronic components include a first electronic component and a second electronic component (shorter in height than the first electronic component. The first electronic component is disposed in the recess, and the second electronic component is disposed in a region outside of the recess on the first major surface.