H10W76/42

Microelectronic assemblies with adaptive multi-layer encapsulation materials
12525497 · 2026-01-13 · ·

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface with conductive contacts, in a first layer; a first material surrounding the first die and extending along a thickness of the first die from the second surface, and wherein the first material includes first particles having an average diameter between 200 and 500 nanometers; a second material surrounding the first die and extending along the thickness of the first die from the first surface, and wherein the second material includes second particles having an average diameter between 0.5 and 12 microns; an interface portion, between the first and second materials, including the first and second particles; and a second die, in a second layer on the first layer, electrically coupled to the conductive contacts on the first die.

PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
20260018528 · 2026-01-15 ·

A package structure includes an embedded component circuit structure layer, a signal interconnection structure layer, a power structure layer, and an electronic component layer. The embedded component circuit structure layer includes at least one embedded component and has a first surface and a second surface opposite to each other. The signal interconnection structure layer is disposed on the first surface and is electrically connected to the embedded component circuit structure layer. The power structure layer is disposed on and electrically connected to the signal interconnection structure layer. The electronic component layer includes a plurality of electronic components, is disposed on the second surface, and is electrically connected to the embedded component circuit structure layer. A coefficient of thermal expansion of the signal interconnection structure layer is higher than a coefficient of thermal expansion of the electronic component layer and a coefficient of thermal expansion of the power structure layer.

Template structure for quasi-monolithic die architectures

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a template structure having a first surface and an opposing second surface, wherein the first surface of the template structure is coupled to the surface of the first die, and wherein the template structure includes a cavity at the first surface and a through-template opening extending from a top surface of the cavity to the second surface of the template structure; and a second die within the cavity of the template structure and electrically coupled to the surface of the first die by interconnects having a pitch of less than 10 microns between adjacent interconnects.

Template structure for quasi-monolithic die architectures

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a template structure having a first surface and an opposing second surface, wherein the first surface of the template structure is coupled to the surface of the first die, and wherein the template structure includes a cavity at the first surface and a through-template opening extending from a top surface of the cavity to the second surface of the template structure; and a second die within the cavity of the template structure and electrically coupled to the surface of the first die by interconnects having a pitch of less than 10 microns between adjacent interconnects.

SEMICONDUCTOR PACKAGE AND PACKAGE ON BOARD
20260068711 · 2026-03-05 ·

The present disclosure provides a semiconductor package including: a substrate; a socket on the substrate and including a socket body having a mounting region on which a first semiconductor chip is mounted and socket pins penetrating the socket body and electrically connected to the substrate; and one or more second semiconductor chips disposed side by side on the substrate adjacent the socket.

OPTICAL MODULE
20260068766 · 2026-03-05 ·

An optical module includes a wiring substrate, electronic components mounted on the wiring substrate, and a waveguide component mounted on the wiring substrate and connecting the electronic components to each other. The waveguide component includes a waveguide substrate including an optical waveguide, a first surface, and a second surface opposite the first surface. A photonic integrated circuit element is mounted on the first surface of the waveguide substrate and optically connected to the optical waveguide. An electrical integrated circuit element is mounted on the second surface of the waveguide substrate and electrically connected to the photonic integrated circuit element.

Semiconductor device and manufacturing method thereof

An electronic device and a method of manufacturing an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of manufacturing electronic devices, and electronic devices manufactured thereby, that comprise utilizing metal studs to further set a semiconductor die into the encapsulant.

SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE

A semiconductor package includes a substrate, a device die, an encapsulating material, a thermal conductive layer, a filling material, and a carrier. The device die is disposed over the substrate. The encapsulating material is disposed over the substrate and laterally encapsulates the device die. The thermal conductive layer conformally covers the device die and the encapsulating material, wherein a profile of the thermal conductive layer comprises a valley portion. The filling material is disposed over the thermal conductive layer and fills the valley portion, wherein a thermal conductivity of the thermal conductive layer is higher than a thermal conductivity of the filling material. The carrier is bonded to the thermal conductive layer and the filling material.

RING STRUCTURES FOR INTEGRATED CIRCUIT PACKAGES

In some embodiments, a device includes a chip-on-interposer structure on a first side of a package substrate, and a first ring structure on the first side of the package substrate. The first ring structure extends around a perimeter of the chip-on-interposer structure. A lid may be disposed on the first ring structure. The device may also include an array of connectors on a second side of the package substrate, wherein the second side of the package substrate is opposite a first side of the package substrate. A second ring structure may be on the second side of the package substrate. The second ring structure is positioned around a perimeter of the array of connectors.