A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.

A semiconductor device includes a dielectric interposer, a first RDL, a second RDL, and a plurality of conductive structures. The dielectric interposer has a first surface and a second surface opposite to the first surface. The first RDL is disposed over the first surface of the dielectric interposer. The second RDL is disposed over the second surface of the dielectric interposer. The conductive structures are disposed through the dielectric interposer and directly contact the dielectric interposer. The conductive structures are electrically connected to the first RDL and the second RDL. Each of the conductive structures has a tapered profile. A minimum width of each of the conductive structures is proximal to the first RDL, and a maximum width of each of the conductive structures is proximal to the second RDL.

Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a metal pad over a first substrate and forming a polymer layer over the metal pad. The method for forming a semiconductor structure further includes forming a seed layer over the metal pad and extending over the polymer layer and forming a conductive pillar over the seed layer. The method for forming a semiconductor structure further includes wet etching the seed layer using an etchant comprising H2O2. In addition, the step of wet etching the seed layer is configured to form an extending portion having a slope sidewall.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

A semiconductor package is provided. The semiconductor package includes a semiconductor device bonded to a base through a first conductive structure. The semiconductor device includes a carrier substrate including a conductive trace. A portion of the conductive trace is elongated. The semiconductor device also includes a second conductive structure above the carrier substrate. A portion of the second conductive structure is in contact with the portion of the conductive trace. The semiconductor device further includes a semiconductor body mounted above the conductive trace. The semiconductor body is connected to the second conductive structure.

A method includes: providing a passivation layer with an embedded MIM capacitor; forming a redistribution layer (RDL) above the passivation layer; and forming an opening in the RDL above the MIM capacitor, wherein the opening separates the RDL into first and second RDL structures, wherein each of the first and second RDL structures has a convex-shaped profile on a sidewall that defines the opening that separates the first RDL structure from the second RDL structure, and wherein the convex-shaped profile on the sidewalls resists stress migration from the RDL to the MIM capacitor to resist stress migration induced cracks forming in the MIM capacitor. The forming an opening includes: removing a portion of the RDL to a first depth using first etching operations; and removing a portion of the RDL to a second depth by laterally etching sidewalls of the first and second RDL structures.

In an embodiment, a device includes: a substrate having a first side and a second side opposite the first side; an interconnect structure adjacent the first side of the substrate; and an integrated circuit device attached to the interconnect structure; a through via extending from the first side of the substrate to the second side of the substrate, the through via being electrically connected to the integrated circuit device; an under bump metallurgy (UBM) adjacent the second side of the substrate and contacting the through via; a conductive bump on the UBM, the conductive bump and the UBM being a continuous conductive material, the conductive bump laterally offset from the through via; and an underfill surrounding the UBM and the conductive bump.

A semiconductor structure includes a semiconductor chip, a substrate and a plurality of bump segments. The bump segments include a first group of bump segments and a second group of bump segments collectively extended from an active surface of the semiconductor chip toward the substrate. Each bump segment of the second group of bump segments has a cross-sectional area greater than a cross-sectional area of each bump segment of the first group of bump segments. The first group of bump segments includes a first bump segment and a second bump segment. Each of the first bump segment and the second bump segment includes a tapered side surface exposed to an environment outside the bump segments. A portion of a bottom surface of the second bump segment is stacked on the first bump segment, and another portion of the bottom surface of the second bump segment is exposed to the environment.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.