A drying device contains an upper drying head and a lower drying head. The upper drying head is arranged above a transport plane, in which objects to be dried can be transported in a transport direction through the drying device. The lower drying head is arranged below the transport plane. The upper drying head and the lower drying head contain in each case at least one air outlet slot and the longitudinal directions of the air outlet slots essentially extending parallel to the transport plane and transversely to the transport direction, and in which slot planes, in which the air outlet slots extend, intersect the transport plane at angles which are greater than 0 and less than 90.

A semiconductor processing device, comprising: a first chamber; a second chamber movable with respect to the first chamber portion between an open position and a closed position, a micro-chamber being formed between the first chamber portion and the second chamber portion when the second chamber portion is in the closed position with respect to the first chamber portion. The first chamber portion has a first channel formed on an inner wall surface of the first chamber portion facing the micro-chamber. The second chamber portion has a second channel formed on an inner wall surface of the second chamber portion facing the micro-chamber. When the second chamber portion is in the closed position with respect to the first chamber portion and a semiconductor wafer is accommodated in the micro-chamber, the first channel and the second channel communicate with each other and form an edge micro-processing space together, such that the outer edge of the semiconductor wafer accommodated in the micro-chamber extends into the edge micro-processing space. The edge micro-processing space is able to realize processing of the outer edge of the semiconductor wafer.

According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.

A substrate processing apparatus includes a first substrate processing portion and a transfer mechanism. The first substrate processing portion processes substrates one by one by immersing each of the substrates in a vertical posture in a first processing liquid. The transfer mechanism receives the substrate in a horizontal posture, changes a posture of the substrate from the horizontal posture to the vertical posture, and carries the substrate in the vertical posture into the first substrate processing portion. The first substrate processing portion includes a processing bath and a substrate placement mechanism. The processing bath has a capacity corresponding to a single substrate. In the processing bath, only the single substrate in the vertical posture is disposed and the first processing liquid is stored. The substrate placement mechanism receives the substrate from the transfer mechanism and places only the single substrate in the vertical posture in the first processing liquid.

The present disclosure relates to a substrate treatment apparatus including: a substrate-holding unit for holding and rotating a substrate; a treatment liquid feed unit for feeding treatment liquid to a top of the substrate; a rinsing liquid feed unit for feeding rinsing liquid to the top of the substrate; a drying liquid feed unit located to reciprocate horizontally above the substrate in such a way as to feed drying liquid to a drying liquid injection nozzle, in a state where the entire top region of the substrate is covered with the rinsing liquid, to allow the rinsing liquid to be replaced with the drying liquid; and a heating unit located under the substrate to heat the substrate.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a turning mechanism. The chamber has an opening through which the inside and the outside communicate with each other and a substrate is carried in and out. The substrate holding portion is disposed in the chamber and holds the substrate one by one. The turning mechanism turns the substrate holding portion to move the substrate holding portion between a plurality of processing positions at which the substrate is processed with the processing liquid in the chamber.

Provided are a tool and a method for processing a semiconductor wafer. A processing method includes supporting a semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.

Provided is an apparatus for processing a substrate, the apparatus including: a liquid treatment chamber; a drying chamber; and a light treatment chamber, in which the light treatment chamber includes: a treatment housing having a treatment space in which the substrate is processed; a support member for supporting the substrate in the treatment space; a light source for irradiating the substrate supported on the support member with light in the form of pulses; and a light filter for selecting a set range of wavelengths of the light generated by the light source and allowing the selected wavelengths to pass through.

A substrate processing apparatus configured to dry a substrate with a processing fluid in a supercritical state includes: a processing vessel; a substrate holder configured to hold the substrate horizontally within the processing vessel; a first supply line connected to a first fluid supply provided at the processing vessel and configured to supply the processing fluid into the processing vessel; a drain line connected to a drain unit provided at the processing vessel and configured to drain the processing fluid from the processing vessel; a bypass line branched off from the first supply line and connected to the drain line, the bypass line being configured to allow at least a part of the processing fluid flowing in the first supply line to be drained into the drain line without passing through the processing vessel; and a bypass opening/closing valve configured to open or close the bypass line.

A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.