A substrate processing method according to an aspect of the present disclosure includes performing a batch processing to process a plurality of substrates at once, performing a single-substrate processing to process the plurality of substrate one by one after the batch processing, identifying a position of a cutout provided on an outer periphery of a substrate subjected to the batch processing, and rotating the substrate such that the identified position of the cutout reaches a first position. The performing the single-substrate processing includes drying the substrate, and the rotating the substrate is performed before the drying the substrate.

A substrate transfer unit includes a temporary placement stage and a transfer hand. Each of the temporary placement stage and the transfer hand holds a substrate at different locations depending on the processing state of the substrate.

A substrate treating apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates at a time, a posture turning unit configured to turn and change the orientation of the substrates to be processed by the batch-type processing unit, while the substrates are wetted with deionized water, a first transport unit that transports the substrates, processed by the batch-type processing unit, to the posture turning unit, a second transport unit that transports the substrates turned horizontally by the posture turning unit to enable them to be subjected to treatment with the hand unit and a cleaning and drying unit configured to perform cleaning and drying treatment at the hand unit.

The present disclosure relates to a flow resistance generating unit that generates a flow resistance in a pipe to solve a flow imbalance problem due to a bent pipe and stabilizes an internal airflow, and a substrate treating apparatus including the same. The substrate treating apparatus comprises a fluid supply unit for supplying fluid for treating a substrate and including an upper fluid supply module for supplying the fluid to an upper portion of the substrate, a lower fluid supply module for supplying the fluid to a lower portion of the substrate, and a supply pipe connected to at least one of the upper fluid supply module and the lower fluid supply module, and a flow resistance generating unit installed in the supply pipe and for generating a flow resistance with respect to the fluid passing through the supply pipe.

The present invention relates to an apparatus for processing supercritical substrate comprising: a chamber having a processing space; a substrate supporting unit for supporting a substrate; an opening/closing unit for opening or closing the processing space; a loading/unloading unit for loading a substrate into or unloading the substrate from the substrate supporting unit; a detection unit for detecting the loading/unloading unit or the substrate; and a control unit for controlling the opening/closing unit, wherein the control unit controls the operation of the opening/closing unit in response to the detection unit detecting the loading/unloading unit or the substrate.

Provided is an apparatus for processing a substrate, the apparatus including: a housing having a treatment space for processing a substrate inside; and substrate supporter for supporting the substrate in the treatment space, and the substrate supporter includes a first support pin and a second support pin, a height of an upper end of the first support pin is provided to be higher than a height of an upper end of the second support pin, so that when the substrate is placed on the substrate supporter, the substrate is inclined downward from a center to an edge of the substrate. Accordingly, regardless of the manufacturing tolerance, the shape of the substrate supported on the substrate supporter may be constant, and pattern lining phenomenon may be prevented from occurring in the edge region of the substrate.

A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO.sub.2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

A substrate treating apparatus includes a housing having an inner space; a support positioned in the inner space and configured to support a substrate; a treating container having a treating space therein and surrounding the supported substrate. A cleaning unit may supply a liquid to the substrate supporting on the support and a heating unit may heat a fluid that is supplied to the treating space to decrease a relative humidity of the treating space.

An ion pulse air injection apparatus includes a pressure regulator configured to regulate a pressure value of air supplied from an external source to a set pressure value, a pulse generator configured to generate a pulse for supplying the air regulated to the set pressure value in a pulse form in a set frequency band, an ion generator configured to ionize the air supplied in the pulse form from the pulse generator, and an ion pulse air injector configured to inject the ionized air in the pulse form in the ion generator onto a surface of an object.

A substrate processing apparatus includes: a processing container; a holder holding a substrate horizontally; and a fluid supplier supplying a processing fluid from a side of the processing container, wherein, when the substrate is held, a first distance between a first virtual plane, including an upper surface of the substrate, and a ceiling surface of the processing container is different from a second distance between a second virtual plane, including a lower surface of the substrate, and a bottom surface of the processing container, wherein the fluid supplier includes a nozzle changing a flow of the processing fluid and including first and second dischargers discharging first and second discharge amounts of the processing fluid respectively from positions above the first virtual plane and below the second virtual plane, and a magnitude relationship between the first and second discharge amounts corresponds to a magnitude relationship between the first and second distances.