A semiconductor device includes: a lower semiconductor structure including one or more first lower test pads, one or more second lower test pads that are alternately arranged with the one or more first lower test pads, and a lower test terminal that is electrically connected to the second lower test pad through a second lower test line; and an upper semiconductor structure positioned over the lower semiconductor structure and including an upper test pad and an upper test terminal that is electrically connected to the upper test pad through an upper test line, wherein, when the lower semiconductor structure and the upper semiconductor structure are aligned, the upper test pad overlaps with and contacts a corresponding first lower test pad among the one or more first lower test pads, and is spaced apart from the second lower test pad that is adjacent to the corresponding first lower test pad.

An example apparatus includes a semiconductor substrate having a front surface on which an internal circuit is formed and a back surface opposite to the front surface, a first TSV penetrating the semiconductor substrate, and a first back side pad on the back surface of the semiconductor substrate and coupled to the first TSV The internal circuit includes an internal test node. The first back side pad is coupled to the internal test node of the internal circuit via the first TSV.

A stacked semiconductor device and methods for producing the same are disclosed here. A semiconductor device can include a first semiconductor die having a first backside passivation layer and a second semiconductor die having a second backside passivation layer. The first backside passivation layer interfaces to the second backside passivation layer to form a stacked semiconductor assembly and provide one or more communicative couplings between the first and second semiconductor dies. A method of forming a stacked semiconductor assembly includes aligning a first plurality of pads disposed in a first backside passivation layer of a first semiconductor die with a second plurality of pads disposed in a second backside passivation layer of a second semiconductor die. The method further includes bonding the first backside passivation layer to the second backside passivation layer to communicatively couple the first plurality of pads to the second plurality of pads.

A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes a first wafer structure and at least one die stack layer stacked on a second side of the first wafer structure. The die stack has first test pad and second test pad, which can be used to test and screen the die in the die stack and the die stack, contributing to increased yield of the semiconductor device. Additionally, metal pad may be formed on a first side of the first wafer structure before the die stack is stacked on the first wafer structure, avoiding warpage or other distortion possibly otherwise caused by high-temperature treatment if they are formed after the die stack is stacked. This facilitates stacking of more dies and/or wafers together. The semiconductor device is obtainable according to the method.

A semiconductor device includes a semiconductor die including a central region and an outer region surrounding the central region, a semiconductor integrated circuit across a plurality of sub regions of the central region, an outer crack detection structure in the outer region along an edge of the outer region and divided into a plurality of outer conduction segments, a central crack detection structure crossing the central region and divided into a plurality of central conduction segments, a plurality of first path selection circuits each connected to at least one of the plurality of outer conduction segments and at least one of the plurality of central conduction segments, and a second path selection circuit connected between the plurality of central conduction segments.

A semiconductor system, a semiconductor device, a through-silicon via (TSV) test method, and a method of manufacturing a semiconductor device are provided. The semiconductor system includes a semiconductor device including a buffer die and first to L-th (where L is an integer greater than or equal to 2) stack dies stacked on the buffer die and communicating with the buffer die through N (where N is a positive integer) TSVs; and a TSV test device that measures each of voltages at one end and voltages at another end on the N TSVs according to a clock signal, compares each of the voltages at the one end and the voltages at the other end with a reference voltage, and determines whether each of the N TSVs has a plurality of TSV defect types according to comparison results.

Various aspects relate to electronic memory devices and mechanisms for communicating with electronic memory devices. A plurality of stacked semiconductor wafers forms a wafer stack. A logic base die is configured to support the plurality of stacked semiconductor wafers. At least one through silicon via is formed through the plurality of stacked semiconductor wafers, wherein the at least one through silicon via is configured to form an inductive coil that is configured to provide a communication interface to the plurality of stacked semiconductor wafers.

A method includes bonding a second die including second feature to a first die. The first die includes a first feature. A first image of at least a portion of the first die is captured using a first image sensor disposed at a first angle that is normal to the first surface. A second image of at least a portion of the second die is captured using a second image sensor disposed at a second angle. The first and second images include at least a portion of the first feature and the second feature. At least one offset between the features are determined based on the first image and the second image. An alignment correction between the dies are determined based on the offset. One or more alignment commands are sent based on the alignment correction to a robot end effector system of an optical inspection system.

A bonded structure is disclosed. The bonded structure can comprise a first semiconductor element having a first contact pad. An interposer can include a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad; a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad. A switching circuitry can be configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.

A reliability of a semiconductor device can be improved by measuring a value of a current flowing through a power transistor accurately. A semiconductor chip includes a power transistor and a source electrode electrically connected to a source region of the power transistor. The source electrode and a lead terminal are electrically connected to each other via a wire. The source electrode includes detection points for detecting the value of the current flowing through the power transistor. The detection points are arranged so as to sandwich a bonding point of the wire bonded to the source electrode.