Embodiments of this application provide a semiconductor structure, an electronic device, and a manufacture method for a semiconductor structure, and relate to the field of heat dissipation technologies for electronic products. An example semiconductor structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The semiconductor device is disposed on an upper surface of the substrate by using the bonding layer. The metal layer is disposed on a lower surface of the substrate. The substrate includes a base plate, a groove formed on the base plate, and a diamond accommodated in the groove. The conducting via penetrates the substrate, the bonding layer, and at least a part of the semiconductor device, and is electrically connected to the metal layer. The groove bypasses the conducting via.

A chip on film package according to one embodiment of the present disclosure includes: a base film; a wiring unit located on the base film; a semiconductor chip mounted on the wiring unit; a first heat dissipation unit configured to come into contact with the semiconductor chip; a second heat dissipation unit configured to come into contact with the first heat dissipation unit, and comprise a metal; and an adhesive unit configured to attach the base film on which the wiring unit is located and the semiconductor chip is mounted to the second heat dissipation unit with the first heat dissipation unit therebetween.

A composite member having an excellent heat resistance is provided. The composite member includes: a substrate composed of a composite material including a non-metal phase and a metal phase; and a metal layer that covers at least a portion of a surface of the substrate, wherein a metal included in each of the metal phase and the metal layer is mainly composed of Ag, and a ratio of a content of Cu to a total content of Ag and Cu in a boundary region of the metal layer with the substrate is less than or equal to 20 atomic %.

A substrate package arrangement may include a substrate that contains a ceramic body, a top metal layer, disposed on a top side of the ceramic body, and a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top surface. The substrate package arrangement may further include a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer, wherein the substrate and lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.

Microelectronic die package structures formed according to some embodiments may include a substrate and a die having a first side and a second side. The first side of the die is coupled to the substrate, and a die backside layer is on the second side of the die. The die backside layer includes a plurality of unfilled grooves in the die backside layer. Each of the unfilled grooves has an opening at a surface of the die backside layer, opposite the second side of the die, and extends at least partially through the die backside layer.

An assembly includes a passive component embodied as a shunt resistor, and a first substrate including a first conductor track and a second conductor track, with the first conductor track being electrically conductively connected to the second conductor track by way of the passive component. The first substrate includes a cavity or an opening into which the passive component protrudes. A second substrate is electrically conductively connected to the first substrate by way of the passive component and includes a dielectric material layer. A heat sink is arranged on a side of the second substrate facing away from the first substrate and is connected to the passive component in an electrically insulating and thermally conductive manner by way of the dielectric material layer of the second substrate. The passive component is arranged on a side of the second substrate facing toward the first substrate.

An electronic component including a first device die hybrid bonded to a carrier, an encapsulant encapsulating side surfaces of the first device die and a cover element disposed over directly bonded to a top surface of the first device die. The encapsulant comprises particles embedded therein, and wherein an interface between a top surface of the encapsulant and a bottom surface of the cover element lacks ground particles

There is provided a thermally conductive grease containing: an alkenyl group-containing organopolysiloxane A having two or more alkenyl groups; an alkenyl group-containing organopolysiloxane B having two or more alkenyl groups; and a thermally conductive powder, in which viscosity A of the alkenyl group-containing organopolysiloxane A at 25 C. and a shear rate of 10 s.sup.1 is smaller than viscosity B of the alkenyl group-containing organopolysiloxane B at 25 C. and a shear rate of 10 s.sup.1, and a ratio (Ti value) of viscosity 1 at a shear rate 1 s.sup.1 to viscosity 10 at 25 C. and a shear rate of 10 s.sup.1 is 3.0 or more.

A power electronics device comprises a power electronics carrier includes a non-corrosive metal substrate and a region of electrical isolation material that forms a direct interface with the metal substrate, and a first semiconductor die mounted on the region of electrical isolation material, and a coefficient of thermal expansion of the region of electrical isolation material substantially matches a coefficient of thermal expansion of metal from the metal substrate at the direct interface.

A method comprises: covering at least part of the integrated circuit with a material, the material including an opening that penetrates through the material; and forming a layer of nanoparticles on at least part of an internal wall of the opening and over at least part of the integrated circuit.