A copper-diamond composite (30) according to the present invention includes a plurality of diamond particles (20) that are dispersed in a metal matrix (10) containing copper, in which when a particle size distribution of the diamond particles (20) is measured using an image particle size distribution analyzer, a number average of a sphericity distribution of the diamond particles (20) is 0.90 or more.

Disclosed herein are microelectronics package architectures utilizing glass layers and methods of manufacturing the same. The microelectronics packages may include a silicon layer, dies, and a glass layer. The silicon layer may include vias. The dies may be in electrical communication with vias. The glass layer may include interconnects in electrical communication with the vias.

A double-sided cooling package for a double-sided, bi-directional junction transistor can include a double-sided, bi-directional, junction transistor chip with an individual, double-sided, bi-directional power switch (collectively, a DSTA). The DSTA can be sandwiched between heat sinks. Each heat sink can include a direct plating copper (DPC) structure, a direct copper bonding (DCB) structure or a direct aluminum bond (DAB) structure. In addition, each heat sink can have opposed first and second copper layers on a substrate, and copper contacts that extend from a respective second copper layer through vias in each substrate to an exterior of the cooling package.

A package structure and method for forming the same are provided. The package structure includes a first die formed over a substrate, and a first package layer surrounding the first die. The package structure includes a lid structure formed over the first die and package layer and a first thermal interface material (TIM) formed between the first die and the lid structure. The first thermal interface material includes liquid metal. The package structure includes a second TIM formed between the first package layer and the lid structure, and a top surface of the second TIM is higher than a top surface of the first TIM.

Systems and methods for cooling an Integrated Circuit (IC) are provided. In one embodiment, the system includes a vessel for holding a coolant in a liquid phase, where the IC is at least in part thermally coupled to the coolant via a heat transfer surface to transfer heat generated by the IC to the coolant. The heat transfer surface has a porous surface exhibiting a gradient of porosity and/or particle size along at least one direction of the heat transfer surface.

The invention regards a thermal guide electrical component configured for conducting heat between a first and a second area comprising at least two first portions, wherein the first portions are electrically conductive connector portions connectable to the first and the second area; a third portion, wherein the third portion is at least one layer of an electrically isolative portion arranged on the at least two first portions; and a fourth silicon substrate portion, wherein the fourth silicon substrate portion is arranged on the third portion such that the third portion forms an electrical barrier between the at least two first portions and the fourth silicon substrate portion, wherein the thermal guide electrical component is configured to transfer a principal heat portion from the first area through the third portion to the fourth silicon substrate portion, further through the fourth silicon substrate portion to the second area via the third portion. A method of conducting heat between a first and a second area is also disclosed.

A semiconductor device, including: a heat dissipation plate having a heat dissipation surface; a cooling module having a cooling surface, the cooling module being disposed so that the cooling surface faces the heat dissipation surface of the heat dissipation plate; and a bonding member provided between the heat dissipation surface and the cooling surface. The bonding member includes: a thermally conductive part that bonds the heat dissipation surface and the cooling surface, and an electrically conductive part that electrically connects the heat dissipation surface and the cooling surface.

A chip package structure is provided. The chip package structure includes a substrate, a chip over the substrate, and a heat-spreading wall structure over the substrate and spaced apart from the chip. The chip package structure also includes a first heat conductive layer between the heat-spreading wall structure and the chip and a second heat conductive layer over the chip and surrounded by the first heat conductive layer. The second heat conductive layer and the chip have different widths. The chip package structure further includes a heat-spreading lid extending across opposite edges of the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid includes a top plate and a lid sidewall structure, the top plate is over the lid sidewall structure, and a thickness of the lid sidewall structure continuously increases from the top plate toward the substrate.

The copper/ceramic bonded body according to the present invention is a copper/ceramic bonded body obtained by bonding copper members consisting of copper or a copper alloy to a ceramic member, where in an edge region E of each of the copper members, an area ratio of each of Ag solid solution parts having an Ag concentration of 0.5% by mass or more and 15% by mass or less is set in a range of 0.03 or more and 0.35 or less.

The copper/ceramic bonded body according to the present invention is a copper/ceramic bonded body obtained by bonding copper members consisting of copper or a copper alloy to a ceramic member, where at a bonded interface between the ceramic member and each of the copper members, the distance between the ceramic member and each of the copper members in an end portion of each of the copper members is in a range of 3 m or more and 30 m or less, and a void ratio in an end portion region (E) of each of the copper members is 10% or less.