A heat radiation structure includes a mesh that abuts on a surface of a die, and a vapor chamber that interposes the mesh between the surface of the die and the vapor chamber. The mesh includes a heat generation element abutting range portion that is provided at a central portion of the mesh, is impregnated with a liquid metal, and abuts on the surface of the die to receive heat, and a pair of heat generation element non-abutting range portions that continuously extends from both sides of the heat generation element abutting range portion and does not abut on the surface of the die. Each of the pair of heat generation element non-abutting range portions is fixed to the vapor chamber via a sheet material. Each of a pair of the heat generation element non-abutting range portions is interposed between a pair of the sheet materials.

A method and apparatus are provided which manages the movement of thermal interface material (TIM) squeezed out from between a lid and an IC die of an IC (chip) package. In one embodiment, a chip package is provided that includes an IC die mounted on a substrate and covered by a lid. A bottom surface of the lid has a die overlapped region facing a top surface of the IC die. The bottom surface of the lid has a first gutter formed therein. An outer sidewall of the first gutter is formed outward of the first die overlapped region as to receive TIM squeezed out from between a lid and an IC die.

A method and apparatus are provided which manages the movement of thermal interface material (TIM) squeezed out from between a lid and an IC die of an IC (chip) package. In one embodiment, a chip package is provided that includes an IC die mounted on a substrate and covered by a lid. A bottom surface of the lid has a die overlapped region facing a top surface of the IC die. The bottom surface of the lid has a first gutter formed therein. An outer sidewall of the first gutter is formed outward of the first die overlapped region as to receive TIM squeezed out from between a lid and an IC die.

Molded device packages which allow electrical contacts to coupled to a first surface of a circuit substrate such as a printed circuit board while allowing the opposite surface to remain exposed for other purposes such as bonding thermal structures such as heatsinks include electrically-conductive pillars which are bonded to the first surface of the substrate and encapsulated in molding material. The molding material can one or more cavities over disposed over the first surface of the substrate which can be evacuated or gas-filled. The electrically-conductive pillars protrude from connected manifold and are joined to each other by a frame portion of the manifold. The manifold is patterned with a masking material that protects the pillars from being etched during a selective etching process which removes the frame portion of the manifold to separate the electrically-conductive pillars from each other.

A cooling device includes a tungsten alloy cooling pad (10), a first substrate (20), a second substrate (30) and multiple connecting columns (40). The tungsten alloy cooling pad (10) is used for being attached on the heat source (H). The first substrate (20) is parallelly superposed on the tungsten alloy cooling pad (10). The second substrate (30) corresponds to the first substrate (20) to be parallelly arranged. Each connecting column (40) is perpendicularly connected between the first substrate (20) and the second substrate (30). Each connecting column (40) is arranged in a matrix. Accordingly, the tungsten alloy cooling pad (10) can rapidly disperse and transfer the heat of the heat source (H) to the first substrate (20) and transfer to the second substrate (30) through each connecting column (40) for cooling to avoid heat accumulation leading to overheat.

An object is to provide a semiconductor module capable achieving both a heat radiation property and an insulation property. A semiconductor module includes: a substrate having a main surface and a main surface on a side opposite to the main surface; a semiconductor device mounted on the main surface; and a heat sink attached to the main surface via an insulation sheet having a thermal conductivity, wherein the substrate includes a through hole passing from the main surface to the main surface, the semiconductor device includes a plurality of electrodes exposed from a surface facing the main surface and a protrusion formed between the plurality of electrodes to be inserted through the through hole, and the insulation sheet is formed so that a length in a thickness direction of the substrate is larger than a length of a tip end portion of the protrusion protruding from the through hole.

A package assembly includes an interposer module on a package substrate, a liquid alloy thermal interface material (TIM) on the interposer module, a seal ring surrounding the liquid alloy TIM, and a package lid on the liquid alloy TIM and seal ring, wherein the seal ring, interposer module and package lid seal the liquid alloy TIM.

A package assembly includes an interposer module on a package substrate, a liquid alloy thermal interface material (TIM) on the interposer module, a seal ring surrounding the liquid alloy TIM, and a package lid on the liquid alloy TIM and seal ring, wherein the seal ring, interposer module and package lid seal the liquid alloy TIM.

An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.

A heat-transfer component defines a thermal-interface surface and has a composite thermal-interface material bonded to the thermal-interface surface. The composite thermal-interface material comprises a particulate filler material dispersed within a metallic carrier material. With a thermal-interface material bonded to the thermal-interface surface, the thermal-contact resistance between the thermal-interface material and the heat-transfer component can be reduced compared to conventional thermal-interface materials, including conventional metallic thermal-interface materials. The particulate filler material can have a higher bulk thermal conductivity than the metallic carrier material and can be wetted by the metallic carrier material, providing a bulk thermal conductivity of the composite thermal-interface material that is higher than that of the carrier material without the particulate filler material. Such materials can relieve thermally induced mechanical stresses across an interface between materials having different coefficients of thermal expansion. Some electrical devices include a heat generating component cooled by such a heat-transfer component.