A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, the second substrate; a periphery modification unit configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the substrate holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof; and an internal modification unit configured to form, after the peripheral modification layer is formed by the periphery modification unit, an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the substrate holder along a plane direction of the first substrate.

A member for a semiconductor manufacturing apparatus, the member has a wafer placement surface and includes: a plurality of gas outflow passages each having an opening on the wafer placement surface; a common gas passage that is in communication with the plurality of gas outflow passages; and at least one gas inflow passage that is in communication with the common gas passage from a surface of the member for a semiconductor manufacturing apparatus that is on an opposite side from the wafer placement surface, the number of the at least one gas inflow passage being smaller than the number of the gas outflow passages in communication with the common gas passage. Among the plurality of gas outflow passages, a gas outflow passage closer to the gas inflow passage has a larger gas passage resistance than a gas outflow passage farther from the gas inflow passage.

Apparatus for processing a wafer-shaped article, the apparatus comprising a support configured to support the wafer-shaped article during a processing operation; wherein: the support comprises a support body and a plurality of gripping pin assemblies adapted and positioned relative to the support body for gripping the wafer-shaped article, wherein each of the gripping pin assemblies is rotatable relative to the support body between a gripping configuration in which the gripping pin assemblies grip the wafer-shaped article, and a non-gripping configuration in which the gripping pin assemblies do not grip the wafer-shaped article; each of the gripping pin assemblies protrudes from a respective hole in the support body; and a sealing member is positioned between at least one of the gripping pin assemblies and the respective hole, the sealing member being configured to restrict infiltration of a processing liquid used in the processing operation into the hole.

In a substrate processing apparatus for supplying a processing liquid onto a substrate being rotated, to thereby process the substrate, an upper support body which is a placement member is separably placed on a lower support body for supporting the substrate. The upper support body is moved up and down by an up-and-down moving part. The upper support body includes a first contact part outside an outer periphery of the substrate in a radial direction. When a second contact part of the up-and-down moving part goes up, the second contact part comes into contact with the first contact part, to thereby move the upper support body up. When the second contact part goes down, the upper support body is placed on the lower support body and the second contact part is separated from the first contact part, and in this state, the lower support body is rotatable.

The present disclosure relates to a substrate transfer method and apparatus which controls a substrate transfer robot using position information of a substrate, when the substrate is loaded or unloaded in the substrate transfer apparatus including the substrate transfer robot. When an operation of setting a new reference value due to a change in process or hardware after setting the initial reference value for loading or unloading the substrate is requested, the substrate transfer method and apparatus can automatically perform the reference value setting operation. Therefore, the substrate transfer method and apparatus can transfer the substrate such that the substrate is located in the center of the susceptor, even though the reference value of the substrate transfer robot is not manually changed.

The disclosure provides a semiconductor substrate heating device, comprising a heating cavity, a main heating part, a compensation control part and at least one temperature compensation unit. The compensation control part and several temperature compensation units are arranged in the heating cavity of the semiconductor substrate heating device, a top surface of the compensation control part and a bottom surface of a heating plate are arranged in a correspondence manner, and the several temperature compensation units arranged between the heating plate and the compensation control part and being in communication connection with the compensation control part are arranged in one-to-one correspondence with several temperature control compensation areas at the bottom surface of the heating plate. Complicated outgoing design is avoided, and temperature compensation adjustment can be performed on the temperature control compensation areas under the control of the compensation control part, thereby effectively controlling the temperature uniformity of the semiconductor substrate with as little manufacturing and maintenance costs as possible.

Embodiments described herein relate to systems and/or methods for providing positional repeatability of closure of an opening of a scientific instrument and/or of alignment of samples relative to a coordinate system of the scientific instrument. A system can comprise a retaining member that receives a sample support cartridge, a first portion of a kinematic coupling that receives a second portion of a kinematic coupling, and the second portion of the kinematic coupling disposed at the retaining member, wherein at least the first portion of the kinematic coupling or the second portion of the kinematic coupling is disposed for joint movement with the sample support cartridge when coupled to the retaining member. A system can comprise a vacuum chamber body, a vacuum chamber door, and a kinematic coupling providing for adjustable alignment of a sample support cartridge at the vacuum chamber door relative to the vacuum chamber body.

A coated chamber component comprises a chamber component and a coating deposited on a surface of the chamber component, the coating comprising an electrically-dissipative material. The electrically-dissipative material is to provide a dissipative path from the coating to a ground. The coating is uniform, conformal, and has a thickness ranging from about 10 nm to about 900 nm.

The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first housing; a second housing combined with the first housing to define an internal space; a rotation coupling part for O fastening the first housing and the second housing to each other such that one of the first housing and the second housing is rotatable with respect to the other one of the first housing and the second housing; and a channel which supplies a fluid to the internal space or discharges the fluid from the internal space, and has at least a part thereof inserted into a pin hole formed in the rotation coupling part.

An embodiment of an apparatus may include a chuck body, and a surface formed on the chuck body to hold a wafer, where the surface has a non-flat shape. Other embodiments are disclosed and claimed.