A method of moving a susceptor in a processing system, suitable for use in semiconductor processing, is provided. The method includes: moving a first susceptor from an interior volume of a first enclosure to an interior volume of a process chamber during a first time period; and positioning, during a second time period, a first substrate on the first susceptor when the first susceptor is in the process chamber, wherein the interior volume of the first enclosure and interior volume of the process chamber are maintained at a non-atmospheric pressure from the beginning of the first time period until the end of the second time period.

Provided is a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing on a plurality of substrates in a process chamber defining a plurality of processing spaces. The substrate processing apparatus includes a process chamber in which N processing spaces are defined to process substrates, N gas injection units installed above the process chamber to respectively correspond to the N processing spaces, N substrate supports that face the gas injection units and support the substrates, a transfer support installed in the process chamber to support the substrates, a rotation support which is installed between the adjacent substrate supports that are substrate transfer paths according to rotation driving of the transfer support and on which the substrates are seated to be rotated about a vertical second rotation axis passing through the substrates.

A substrate support device relating to technology disclosed in the description of the present application includes: a holding plate for opposing a substrate bowable by being heated by irradiation with flash light; and a plurality of substrate support pins provided on the holding plate and being for supporting the substrate, wherein the plurality of substrate support pins are arranged at locations where a volume of a space between the holding plate and the substrate in an unbowed state and a volume of a space between the holding plate and the substrate in a bowed state are equal to each other. Breakage of the substrate can be suppressed in a case where the substrate is bowed by flash light.

In a substrate holder, a gas supply part sends out a gas to the space between the lower surface of a substrate and a base surface of a base part to form a radially outward airflow. A division plate is arranged radially outward of the outer peripheral edge of the substrate on the base surface of the base part to surround the substrate. The inner peripheral edge of the division plate and the outer peripheral edge of the substrate face each other in the radial direction with a space in between. The upper surface of the division plate is located below or at the same position in the up-down direction as the upper surface of the substrate. An annular passage is provided between the lower surface of the division plate and the base surface of the base part.

An electrostatic chuck device comprising: a plate-shaped electrostatic chuck part which has an electrostatic adsorption electrode provided therein and has a mounting surface on which a plate-shaped sample is mounted; and a base part which supports the electrostatic chuck part on a support surface thereof from an opposite side of the mounting surface, wherein the base part has a disk shape which has a central axis at a center thereof, and a coolant channel extending along the support surface is provided inside the base part, wherein the coolant channel includes an outer peripheral channel which overlaps an outer edge of the plate-shaped sample when viewed from an axial direction of the central axis, and an inner peripheral channel which is disposed on an inner side in a radical direction than the outer peripheral channel, wherein at least a portion of the inner peripheral channel extends spirally around the central axis, and a channel cross-sectional area of the inner peripheral channel decreases as a distance from the central axis increases.

A substrate holder for mounting a substrate, comprising fixing elements for fixing the substrate, wherein the fixing elements can be grouped into zones, and a corresponding method.

The present invention proposes a substrate processing apparatus, a transport device, and the like capable of properly implementing processing even when a malfunction occurs in a sensor for detecting that an object such as a substrate is properly positioned. The substrate processing apparatus is equipped with a controller configured to accept a predetermined external input if a first sensor does not detect that a substrate is properly positioned in a first holding mechanism when the substrate is transferred from a second holding mechanism to the first holding mechanism and to allow the substrate to be processed or transported using the first holding mechanism based on the predetermined external input being performed regardless of the detection by the first sensor.

A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

A batch mode SiC (Silicon Carbide) epitaxial reactor comprising an inlet gas manifold, an inlet heat exchanger coupled to the inlet gas manifold, a plurality of removable vertical susceptors configured to couple to the inlet heat exchanger, a plurality of exhaust heat exchangers coupled to the plurality of removable vertical susceptors, and a scrubber coupled to the plurality of exhaust heat exchangers. Each removable vertical susceptor is configured to hold at least two SiC wafers tilted in a vertical fixed position relative to a flow of heated gases output by the inlet heat exchanger. The plurality of exhaust heat exchangers are configured to heat hydrogen gas. The heated hydrogen gas is configured to couple to the inlet heat exchanger to heat gases provided through the inlet gas manifold to grow SiC on the plurality of SiC wafers in the plurality of removable vertical susceptors thereby reducing energy consumption.

A semiconductor device is made with a boat carrier including stainless steel. A Polytetrafluoroethylene (PTFE) layer is formed over the boat carrier. A semiconductor package substrate is disposed over the boat carrier. A manufacturing step is performed on the semiconductor package substrate. An electrostatic discharge (ESD) is imparted on the boat carrier during the manufacturing step. The semiconductor package substrate is protected from the ESD by the PTFE layer.