A package substrate is disclosed. The package substrate includes a die package in the package substrate located at least partially underneath a location of a power delivery interface in a die that is coupled to the surface of the package substrate. Connection terminals are accessible on a surface of the die package to provide connection to the die that is coupled to the surface of the package substrate. Metal-insulator-metal layers inside the die package are coupled to the connection terminals.

A high-frequency device includes a metal base, a dielectric substrate mounted on the metal base, an insulator layer provided on the metal base, covering the dielectric substrate, and having a dielectric constant smaller than that of the dielectric substrate, and a first line that overlaps the dielectric substrate as seen from a thickness direction of the insulator layer and is provided on an upper surface of the insulator layer to form a first microstrip line.

A microwave device can include: a first multilayer resin substrate including a ground via hole; a semiconductor substrate at the first multilayer resin substrate and including a high frequency circuit; a conductive heat spreader at an opposite face of the semiconductor substrate from a face of the semiconductor substrate facing the first multilayer resin substrate; a resin over the first multilayer resin substrate and covering the semiconductor substrate and the heat spreader such that an opposite face of the heat spreader from a face of the heat spreader facing the semiconductor substrate is exposed as an exposed face; and a conductive film covering the resin and the heat spreader and touching the exposed face. The semiconductor substrate can include a ground through hole extending through the semiconductor substrate. The conductive film can be electrically connected to the ground via hole via the heat spreader and the ground through hole.

In various embodiments, a bonded structure is disclosed. The bonded structure can include an element and a passive electronic component having a first surface bonded to the element and a second surface opposite the first surface. The passive electronic component can comprise a first anode terminal bonded to a corresponding second anode terminal of the element and a first cathode terminal bonded to a corresponding second cathode terminal of the element. The first anode terminal and the first cathode terminal can be disposed on the first surface of the passive electronic component.

A semiconductor structure is provided. The semiconductor structure includes a substrate and a deep trench capacitor (DTC) region formed in the substrate. The DTC region includes a plurality of DTC units, and each DTC unit includes: a trench extending downwardly from a top surface of the substrate; a first conductive layer disposed in the trench; a second conductive layer disposed in the trench; and a dielectric layer sandwiched by the first conductive layer and the second conductive layer. Each DTC unit is elongated, and a first group of the plurality of DTC units extend horizontally in a first direction, whereas a second group of the plurality of the DTC units extend horizontally in a second direction.