Provided is a semiconductor device A including: a first electrode 10; a second electrode 20; a semiconductor layer 30 in contact with the first electrode 10 and the second electrode 20; and a protective layer 40 configured to cover at least a part of a surface of the semiconductor layer 30, wherein the protective layer 40 includes a spinel oxide.

A method for manufacturing semiconductor device according to an embodiment includes: forming a first metal oxide layer containing aluminum as a main component above a substrate; forming an oxide semiconductor layer above the first metal oxide layer; forming a gate insulating layer above the oxide semiconductor layer; forming a second metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the second metal oxide layer is formed above the gate insulating layer; removing the second metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.

Various embodiments pertain to a high mobility transistor element resulting from IGTO oxide semiconductor crystallization, and a production method for same, the transistor element comprising a substrate and a crystalline IGTO channel layer disposed on the substrate, and being produced by converting a non-crystalline IGTO channel layer provided on the substrate to a crystalline IGTO channel layer.

Disclosed are a semiconductor structure and a method for manufacturing a semiconductor structure, the method includes: forming a first transition layer, a protection layer and an active structure layer sequentially epitaxially on a side of a growth substrate, where a surface, away from the growth substrate, of the first transition layer is a two-dimensional flat surface; on a first plane, an orthographic projection of the active structure layer is at least partially covered by an orthographic projection of the protection layer, and the first plane is perpendicular to an arrangement direction of the protection layer and the active structure layer; detaching the growth substrate by a laser lift-off process, to make the epitaxial layer transferred to a transfer substrate; etching the first transition layer up to the protection layer, to make a surface, away from the active structure layer, of the protection layer to be a planarization surface.

A method includes providing a two-level gallium nitride (GaN) epitaxial substrate comprising a first GaN drift layer characterized by a first doping concentration and a second GaN drift layer disposed on the first GaN drift layer and characterized by a second doping concentration higher than the first doping concentration and forming a plurality of pedestals in the second GaN drift layer. Each of the plurality of pedestals is laterally separated by one of a plurality of funnels. The method also includes performing a channel regrowth process to regrow a plurality of n-type GaN channels, each disposed in one of the plurality of funnels, and performing a gate regrowth process to regrow p-type GaN. The method further includes patterning the p-type GaN to form a plurality of p-type GaN gates disposed in one of the plurality of n-type GaN channels, and forming source contacts, gate contacts, and a drain contact.

A substrate processing apparatus includes: a tray provided in a vacuum processing container and having a recess that accommodates a target made of a low-melting-point material; a refrigerator that cools the tray; a substrate holder that holds a substrate; a reversal driver that reverses the position of the substrate holder upside down; and a rotation driver that rotates the substrate holder in a circumferential direction of the substrate.

A substrate processing apparatus includes: a tray provided in a vacuum processing container and having a recess that accommodates a target made of a low-melting-point material; a refrigerator that cools the tray; a substrate holder that holds a substrate; a reversal driver that reverses the position of the substrate holder upside down; and a rotation driver that rotates the substrate holder in a circumferential direction of the substrate.

A method for forming a metal oxide layer with high carrier mobility. The method for forming a metal oxide layer includes a first step of forming a first amorphous film, a second step of forming a first crystallized film from the first amorphous film by first heat treatment, a third step of removing a part of the first crystallized film by wet etching to form a seed crystal layer, a fourth step of forming a second amorphous film over the seed crystal layer, and a fifth step of forming a second crystallized film from the second amorphous film by second heat treatment. Each of the first amorphous film, the first crystallized film, the seed crystal layer, the second amorphous film, and the second crystallized film includes indium and oxygen. The first crystallized film includes crystal grains having random orientations. The seed crystal layer has a first crystal orientation with respect to a formation surface. The second crystallized film is formed of crystal grains having the first crystal orientation.