A shower plate that includes a plate-like member provided at a top of a processing chamber is provided. The shower plate has first holes communicating with a first flow path in the shower plate. The shower plate includes first chamber valves provided with the respective first holes. The shower plate has second holes communicating with a second flow path in the shower plate. The shower plate includes second chamber valves provided with the respective second holes. The shower plate has third holes provided in the plate-like member to correspond to the first holes and the second holes. The shower plate includes third chamber valves provided with the respective third holes. The first chamber valves, the second chamber valves, and the third chamber valves are piezoelectric elements.

Disclosed is a method for manufacturing a zeroth interlayer dielectric, including: step 1: providing a semiconductor substrate subjected to a process of forming a contact etch stop layer; step 2: performing a first deposition process using a HARP process, to form a first oxide layer fully filling a spacing region; step 3: polishing the first oxide layer using a first chemical mechanical polishing process; step 4: performing wet etch to lower a top surface of the first oxide layer and form a first groove at the top of the spacing region; step 5: performing a second deposition process using an HDP CVD process, to form a second oxide layer fully filling the first groove; and step 6: polishing the second oxide layer using a second chemical mechanical polishing process, which is stopped on a surface of a first gate material layer of a first gate structure.

A semiconductor arrangement is provided. The semiconductor arrangement includes a dielectric layer defining an opening, an adhesion layer in the opening, and a conductive layer in the opening over the adhesion layer. A material of the conductive layer is a same material as an adhesion material of the adhesion layer.

A method for manufacturing a semiconductor device of an embodiment includes a first film forming step of forming a first electrode layer on a base material back surface facing a side opposite to a device surface of a base material on which a circuit portion is formed. The method includes a second film forming step of forming a second electrode layer on a front surface of a film-formed member. The method includes a joining step of joining the first electrode layer and the second electrode layer. The method includes a film-formed member removing step of removing the film-formed member from the second electrode layer.

According to the technique of the present disclosure, there is provided a substrate processing apparatus capable of improving thickness uniformity of a film formed on each substrate. The apparatus includes a substrate retainer; a reaction tube; a vertical driver for moving the substrate retainer into or out of the reaction tube; a heater provided around the reaction tube; a gas supplier having a plurality of gas feeders corresponding to a plurality of substrates, respectively, supported by the substrate retainer; an exhauster through which a gas is exhausted from the reaction tube; and a controller capable of controlling the vertical driver and the gas supplier such that the gas is capable of being supplied through the plurality of gas feeders while maintaining a relative position of a substrate with respect to a gas feeder corresponding thereto at a first position or at a second position different from the first position.