The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

A first transfer device and a second transfer device are configured to transfer a first substrate and a second substrate in a normal pressure atmosphere. A third transfer device is configured to transfer the first substrate and the second substrate in a decompressed atmosphere. A load lock chamber has accommodation sections allowed to accommodate therein the first substrate and the second substrate, and is allowed to switch an inside of the accommodation sections between the normal pressure atmosphere and the decompressed atmosphere. Multiple gates are respectively disposed on three different sides of the load lock chamber, and allowed to open or close the load lock chamber. The first transfer device, the second transfer device, and the third transfer device carry the first substrate and the second substrate into/out of the load lock chamber through different gates among the multiple gates.

A substrate processing method includes: forming a photosensitive film on a surface of a substrate; accommodating the substrate with the formed photosensitive film in a first chamber and exposing the photosensitive film to exposure light in the first chamber; accommodating the substrate with the formed photosensitive film in a second chamber different from the first chamber and performing a pressure reduction process to reduce pressure inside the second chamber to a subatmospheric pressure; subjecting, after the pressure reduction process, the photosensitive film to a moisture-containing gas; and developing the photosensitive film of the substrate after exposing and subjecting.

There is provided a configuration that includes: at least one transfer mechanism configured to transfer a substrate and at least one processing mechanism configured to process the substrate; an earthquake detector configured to detect an earthquake; and a controller configured to control the at least one transfer mechanism and the at least one processing mechanism according to a detection result of the earthquake detector, wherein the controller is configured to be capable of performing a stopping operation of the at least one transfer mechanism according to a P wave (initial tremor wave) and an S wave (principal fluctuation wave).

A method for implementing a thin film deposition process includes: transporting a substrate into a first chamber; feeding a precursor into the first chamber, the precursor being adsorbed on a top surface of the substrate; supplying radiant energy to at least a part of the top surface of the substrate to facilitate reaction between the precursor and the top surface of the substrate; transporting the substrate with the top surface being precursor-adsorbed into a second chamber that is separated from the first chamber and that is spatially isolated from the first chamber; feeding a reactant into the second chamber, wherein reaction between the reactant and the precursor results in a thin film forming on the top surface.

The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

A gate valve apparatus and a semiconductor manufacturing apparatus, in which a volume of a drive portion for driving a valve body is reduced, are provided. The gate valve apparatus includes a housing having an opening, a valve body configured to open and close the opening, and a drive portion configured to drive the valve body, in which the drive portion includes a first crankshaft including a first input shaft rotatably supported by a side wall of the housing and a first output shaft rotatably supported by the valve body, a second crankshaft including a second input shaft rotatably supported by the side wall of the housing and a second output shaft rotatably supported by the valve body, a rotation transmission portion configured to transmit rotation of the first input shaft to the second input shaft, and an actuator configured to rotate the first input shaft.

One or more substrate processing apparatuses, one or more methods of manufacturing article(s), one or more substrate processing methods, and one or more computer-readable storage or recording mediums are provided herein. Provided is one or more embodiments of a substrate processing apparatus including a stage on which a substrate is mounted, a conveyor that operates to convey the substrate from the stage, a measuring sensor that operates to measure a temperature of the conveyor, an adjuster that operates to adjust a temperature of the substrate mounted on the stage, and a controller or processor that operates to perform an adjusting step of causing the adjuster to adjust the temperature of the substrate mounted on the stage so as to become the temperature of the conveyor measured by the measuring sensor.

Apparatuses and methods are provided for cleaning objects, such as semiconductor wafers. The apparatuses include an ion flow device that includes an ionizer configured to generate an electric field sufficient to electrically charge gas molecules of a filtered gas to produce an ionized gas and a nozzle configured to expel the ionized gas toward a surface of an object to neutralize electrostatic charges of particles on the surface, a blower device configured to propel the filtered gas to the ionizer and the ionized gas out of the nozzle, passages disposed on first and second sides of the ion flow device that are in fluidic communication with the surface of the object, and an exhaust device configured to flow the ionized gas from the surface of the object through the first and second passages to remove the particles from the surface.

One object of the present disclosure is to flexibly and promptly save a processing solution in an apparatus for processing a substrate. An apparatus for processing a substrate is configured to change over a transfer time table between an ordinary mode that has a maximum throughput of the apparatus for processing the substrate and a processing solution saving mode that saves a processing solution in at least one of processing tanks. The apparatus for processing the substrate determines whether or not the apparatus for processing the substrate is in a slack period that has a small demand output by the apparatus for processing the substrate, based on a rate-controlling point that limits a processing speed of the entire apparatus for processing the substrate, and sets the transfer time table to the processing solution saving mode when it is determined that the apparatus for processing the substrate is in the slack period, while setting the transfer time table to the ordinary mode when it is determined that the apparatus for processing the substrate is not in the slack period.