A capacitor includes a bottom electrode including a substrate doped semiconductor portion located within a substrate, a bottom node dielectric located on a top surface of the bottom electrode, a middle electrode including a middle doped semiconductor portion located on the bottom node dielectric, a top node dielectric located on a top surface of the middle electrode, and a top electrode including, from bottom to top, an electrically-doped semiconductor portion, an oxygen containing interfacial layer, an electrically-undoped semiconductor portion, and at least one electrode metallic layer.

A semiconductor device includes a plurality of seed structures disposed in a dielectric layer. The plurality of seed structures are spaced apart from each other. Respective ones of the plurality of seed structures have a tapered shape with a decreasing width from an upper surface of the dielectric layer, and include semiconductor crystalline material.

An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

A method of fabricating a semiconductor device includes providing a substrate, implementing a growth procedure to form a semiconductor layer supported by the substrate, performing an anneal of the semiconductor layer, the anneal being conducted at a higher temperature than the growth procedure, and repeating the growth procedure and the anneal. The anneal is conducted at or above a decomposition temperature for the semiconductor layer.

Disclosed herein are methods and systems for epitaxial crystallization on an integrated processing architecture. In some embodiments, a method may include performing a first plasma treatment on a semiconductor substrate to remove a native oxide layer along an upper surface of the semiconductor substrate, and forming a film layer over the upper surface by performing a second plasma treatment on the semiconductor substrate. The method may further include performing an ion implantation process to crystallize the film layer, wherein the implant process comprises delivering an ion species to the film layer while the semiconductor substrate is at a temperature greater than 100 C.

A method for manufacturing semiconductor device according to an embodiment includes: forming a first metal oxide layer containing aluminum as a main component above a substrate; forming an oxide semiconductor layer above the first metal oxide layer; forming a gate insulating layer above the oxide semiconductor layer; forming a second metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the second metal oxide layer is formed above the gate insulating layer; removing the second metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.

Various embodiments pertain to a high mobility transistor element resulting from IGTO oxide semiconductor crystallization, and a production method for same, the transistor element comprising a substrate and a crystalline IGTO channel layer disposed on the substrate, and being produced by converting a non-crystalline IGTO channel layer provided on the substrate to a crystalline IGTO channel layer.