An embodiment is a device including an integrated circuit die having an active side and a back side, the back side being opposite the active side, a molding compound encapsulating the integrated circuit die, and a first redistribution structure overlying the integrated circuit die and the molding compound, the first redistribution structure including a first metallization pattern and a first dielectric layer, the first metallization pattern being electrically coupled to the active side of the integrated circuit die, at least a portion of the first metallization pattern forming an inductor.

A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over an active side of a semiconductor die. A die pad of the semiconductor die is connected to an interconnect segment of the RDL by way of a bond wire. An encapsulating layer is formed over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.

A display device includes a first electrode and a second electrode, a first insulating layer covering the first electrode and the second electrode, light emitting elements disposed on the first insulating layer, a first connection electrode disposed on the first electrode and contacting an end of each of the light emitting elements, a second connection electrode spaced apart from the first connection electrode and disposed on the second electrode and contacting another end of each of the light emitting elements, a second insulating layer disposed on the first insulating layer and at least partially covering the first connection electrode and the second connection electrode, and a third insulating layer disposed on part of the second insulating layer, wherein the second insulating layer comprises an opening overlapping a part between the first connection electrode and the second connection electrode spaced apart from each other.

A pixel includes first and second sub-pixel areas adjacent to each other in a first direction; first and second electrodes disposed in each of the first and the second sub-pixel areas, and spaced apart from each other; light emitting elements disposed between the first and the second electrodes in each of the first and the second sub-pixel areas; a first driving transistor disposed in the first sub-pixel area, and electrically connected to the first electrode; and a second driving transistor disposed in the second sub-pixel area, and electrically connected to the first electrode. The first electrode of the first sub-pixel area and the first electrode of the second sub-pixel area are electrically disconnected from each other, and the second electrode of the first sub-pixel area and the second electrode of the second sub-pixel area are electrically connected to each other.

A semiconductor device includes a first conductive portion, a second conductive portion, a first semiconductor element, a second semiconductor element, two first terminals, a second terminal, a third terminal, a first conductive member, a second conductive member, a plurality of first control terminals, a plurality of second control terminals, and a sealing resin. In a first direction orthogonal to the thickness direction, the first conductive portion and the second conductive portion are spaced apart from each other. The second terminal and the second conductive member form a conduction path located outside the plurality of first control terminals in a second direction orthogonal to the thickness direction and the first direction.

A semiconductor device includes a first conductive portion, a second conductive portion, a first semiconductor element, a second semiconductor element, two first terminals, a second terminal, a third terminal, a first conductive member, a second conductive member, a plurality of first control terminals, a plurality of second control terminals, and a sealing resin. In a first direction orthogonal to the thickness direction, the first conductive portion and the second conductive portion are spaced apart from each other. The second terminal and the second conductive member form a conduction path located outside the plurality of first control terminals in a second direction orthogonal to the thickness direction and the first direction.

A display device includes a display area and a non-display area which is adjacent to the display area, a pad in the non-display area and connected to the display area, and an insulating layer on the pad. A portion of the pad is exposed outside of the insulating layer to define an exposed portion of the pad, the insulating layer includes a first portion having a first thickness and a second portion having a second thickness which is less than the first thickness, and the second portion of the insulating layer is between the exposed portion of the pad and the first portion of the insulating layer.

Provided is a semiconductor module including a stacked substrate in which a plurality of wiring layers are stacked, and a plurality of semiconductor devices mounted on a first surface of the stacked substrate, wherein the plurality of wiring layers have a first wiring layer having a high-potential wiring to which a high potential is applied, a second wiring layer having a low-potential wiring to which a low potential is applied, and a third wiring layer having a connection wiring which connects the plurality of semiconductor devices mounted on the first surface of the stacked substrate to each other, and the high-potential wiring and the low-potential wiring are at least partially overlapped with each other in a stack direction.

Provided is a semiconductor module including a stacked substrate in which a plurality of wiring layers are stacked, and a plurality of semiconductor devices mounted on a first surface of the stacked substrate, wherein the plurality of wiring layers have a first wiring layer having a high-potential wiring to which a high potential is applied, a second wiring layer having a low-potential wiring to which a low potential is applied, and a third wiring layer having a connection wiring which connects the plurality of semiconductor devices mounted on the first surface of the stacked substrate to each other, and the high-potential wiring and the low-potential wiring are at least partially overlapped with each other in a stack direction.

A display device includes a printed circuit board attached to a side of a substrate, a frame facing the printed circuit board, a cover layer disposed between the substrate and the frame and overlapping the printed circuit board in a plan view, and a first reflective layer disposed on a surface of the frame and disposed between the frame and the cover layer.